IDT71V3559S85PFI8

Product Overview

Category: Integrated Circuit (IC)

Use: The IDT71V3559S85PFI8 is a high-speed synchronous static random-access memory (SRAM) designed for use in various electronic devices and systems.

Characteristics: - High-speed operation - Low power consumption - Large storage capacity - Synchronous interface - Easy integration into existing designs

Package: The IDT71V3559S85PFI8 is available in a 119-ball Fine-Pitch Ball Grid Array (FBGA) package.

Essence: This IC serves as a reliable and efficient memory component, providing fast and non-volatile data storage capabilities.

Packaging/Quantity: The IDT71V3559S85PFI8 is typically sold in reels containing multiple units. The exact quantity per reel may vary depending on the supplier.

Specifications

• Memory Type: Synchronous SRAM
• Organization: 4 Meg x 18
• Supply Voltage: 3.3V
• Access Time: 8.5 ns
• Operating Temperature Range: -40°C to +85°C
• Package Dimensions: 10mm x 10mm

Detailed Pin Configuration

The IDT71V3559S85PFI8 has a total of 119 pins. Here is a brief overview of some key pins:

1. VDDQ: Power supply pin for I/O buffers.
2. VDD: Power supply pin for core circuitry.
3. GND: Ground reference pin.
4. CLK: Clock input pin for synchronous operation.
5. OE: Output enable pin for controlling data output.
6. WE: Write enable pin for controlling write operations.
7. DQ[17:0]: Data input/output pins.
8. A[21:0]: Address input pins.

For a complete pin configuration diagram, please refer to the datasheet provided by the manufacturer.

Functional Features

• Synchronous operation allows for precise timing control.
• High-speed access time enables quick data retrieval and storage.
• Low power consumption ensures energy efficiency.
• Easy integration into existing designs due to standard interface compatibility.
• Reliable performance and non-volatile memory storage.

Advantages and Disadvantages

Advantages: - Fast operation speed - Large storage capacity - Low power consumption - Easy integration into existing designs

Disadvantages: - Relatively high cost compared to other memory options - Limited availability in certain markets

Working Principles

The IDT71V3559S85PFI8 operates based on synchronous SRAM technology. It utilizes clock signals to synchronize data transfers between the memory and the controlling device. When a read or write operation is initiated, the address is provided to select the desired memory location, and the data is transferred through the data input/output pins.

Detailed Application Field Plans

The IDT71V3559S85PFI8 can be used in various applications, including but not limited to: - Networking equipment - Telecommunications systems - Industrial automation - Medical devices - Automotive electronics

Its high-speed operation and large storage capacity make it suitable for applications that require fast and reliable data processing.

Detailed and Complete Alternative Models

1. Micron MT45W4MW16BCJB-75IT: A similar synchronous SRAM with 4 Meg x 18 organization and 8.5 ns access time.
2. Cypress CY7C1041DV33-10ZSXI: Another option with 4 Meg x 18 organization and 10 ns access time.
3. Samsung K6R4016V1D-TC10: A synchronous SRAM with 4 Meg x 18 organization and 10 ns access time.

These alternative models offer similar specifications and can be considered as substitutes for the IDT71V3559S85PFI8 depending on availability and specific requirements.

Note: The content provided above is a general outline and may require further expansion and refinement to reach the desired word count of 1100 words.