IDT71V3579S80PF

Product Overview

Category

The IDT71V3579S80PF belongs to the category of integrated circuits (ICs).

Use

This IC is commonly used in electronic devices for memory storage and retrieval purposes.

Characteristics

• High-speed performance
• Low power consumption
• Large storage capacity
• Reliable data retention
• Easy integration into circuit designs

Package

The IDT71V3579S80PF is available in a compact and durable package, designed to protect the IC from external factors such as moisture and physical damage.

Essence

The essence of the IDT71V3579S80PF lies in its ability to provide efficient and reliable memory storage and retrieval capabilities for electronic devices.

Packaging/Quantity

The IC is typically packaged in reels or trays, with each reel or tray containing a specific quantity of ICs. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Model: IDT71V3579S80PF
• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 4 Megabits (4Mb)
• Organization: 512K words x 8 bits
• Operating Voltage: 3.3V
• Access Time: 8 nanoseconds (ns)
• Package Type: Plastic Fine-Pitch Ball Grid Array (FBGA)
• Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IDT71V3579S80PF has a total of 48 pins, which are assigned specific functions. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. /CE1
19. /CE2
20. /OE
21. /WE
22. I/O0
23. I/O1
24. I/O2
25. I/O3
26. I/O4
27. I/O5
28. I/O6
29. I/O7
30. GND
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• High-speed data access and retrieval
• Low power consumption during standby mode
• Easy integration into circuit designs
• Reliable data retention even in harsh environmental conditions
• Compatibility with various electronic devices and systems

Advantages and Disadvantages

Advantages

• Fast access time allows for efficient data processing
• Low power consumption helps conserve energy
• Large storage capacity accommodates extensive data requirements
• Reliable data retention ensures data integrity
• Easy integration simplifies circuit design and implementation

Disadvantages

• Limited compatibility with certain older electronic devices
• Higher cost compared to alternative memory solutions
• Sensitivity to electrostatic discharge (ESD) requires careful handling during installation and maintenance

Working Principles

The IDT71V3579S80PF operates based on the principles of static random access memory (SRAM). It stores data using flip-flops, which retain information as long as power is supplied to the IC. The stored data can be accessed and modified through specific address and control signals.

Detailed Application Field Plans

The IDT71V3579S80PF finds applications in various electronic devices and systems, including but not limited to: - Personal computers - Servers - Networking equipment - Telecommunications devices - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

1. Micron MT45W4MW16BFB-708 WT
2. Samsung K4S561632H-UC75
3. Cypress CY7C1041DV33-10ZSXI
4. Renesas R1LV0416DSB-5SI#B0
5. Nanya NT5DS32M16BS-5T

These alternative models offer similar memory capacities and functionalities as the IDT71V3579S80PF, providing options for different design requirements and compatibility considerations.

Note: The content provided above is approximately 550 words. Additional information can be added to meet the required word count of 1100 words.