IDT71V416L10PH

Product Overview

Category: Integrated Circuit (IC)

Use: The IDT71V416L10PH is a high-speed, low-power CMOS static random access memory (SRAM) designed for use in various electronic devices and systems. It provides fast and reliable data storage and retrieval capabilities.

Characteristics: - High-speed operation - Low power consumption - Large storage capacity - Easy integration into electronic circuits - Reliable performance

Package: The IDT71V416L10PH is available in a 44-pin plastic thin small outline package (TSOP). This package offers compact size and easy handling during assembly.

Essence: The essence of the IDT71V416L10PH lies in its ability to provide efficient and reliable data storage and retrieval functions in electronic devices and systems.

Packaging/Quantity: The IDT71V416L10PH is typically packaged in reels containing a quantity of 250 units per reel.

Specifications

Organization: 4 Meg x 16
Supply Voltage: 3.3V ± 0.3V
Access Time: 10 ns
Standby Current: 10 mA (max)
Operating Temperature Range: -40°C to +85°C
Data Retention Voltage: 2.0V (min)

Detailed Pin Configuration

The IDT71V416L10PH has a total of 44 pins. The pin configuration is as follows:

A0-A19: Address Inputs
DQ0-DQ15: Data Input/Output
WE: Write Enable
OE: Output Enable
CE1, CE2: Chip Enables
VCC: Power Supply
GND: Ground

(Complete pin configuration table can be found in the product datasheet)

Functional Features

High-speed operation allows for quick data access and transfer.
Low power consumption ensures energy efficiency in electronic devices.
Large storage capacity provides ample space for data storage requirements.
Easy integration into electronic circuits simplifies the design process.
Reliable performance ensures consistent and accurate data retrieval.

Advantages and Disadvantages

Advantages: - High-speed operation enables fast data access. - Low power consumption prolongs battery life in portable devices. - Large storage capacity meets the demands of data-intensive applications. - Easy integration simplifies circuit design and assembly. - Reliable performance ensures data integrity.

Disadvantages: - Limited compatibility with certain older systems or devices. - Higher cost compared to alternative memory technologies. - Sensitivity to electrostatic discharge (ESD) requires proper handling during installation.

Working Principles

The IDT71V416L10PH operates based on the principles of static random access memory (SRAM). It stores data using flip-flops, which retain information as long as power is supplied. The address inputs are used to select specific memory locations, while the write enable (WE) and output enable (OE) signals control the read and write operations. The chip enables (CE1, CE2) allow for multiple memory devices to be connected together.

Detailed Application Field Plans

The IDT71V416L10PH finds application in various electronic devices and systems, including but not limited to: - Personal computers - Servers - Networking equipment - Telecommunications devices - Consumer electronics - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

Samsung K6R4016V1C
Micron MT45W4MW16BFB
Cypress CY62167EV30
Renesas R1LV0416DSB-7LI

(Complete list of alternative models can be found in the product datasheet)

Note: The content provided above is a sample entry and may not reflect actual specifications or details of the IDT71V416L10PH. Please refer to the official product documentation for accurate information.

기술 솔루션에 IDT71V416L10PH 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

Sure! Here are 10 common questions and answers related to the application of IDT71V416L10PH in technical solutions:

Q: What is IDT71V416L10PH? A: IDT71V416L10PH is a high-speed, low-power CMOS static RAM (SRAM) chip with a capacity of 4 Megabits (Mbit).
Q: What are the key features of IDT71V416L10PH? A: The key features include a 10 ns access time, low power consumption, wide operating voltage range, and compatibility with various microcontrollers and processors.
Q: How can IDT71V416L10PH be used in technical solutions? A: It can be used as a primary or secondary memory in applications such as embedded systems, networking devices, telecommunications equipment, and industrial automation.
Q: What is the operating voltage range for IDT71V416L10PH? A: The operating voltage range is typically between 4.5V and 5.5V.
Q: Can IDT71V416L10PH be interfaced with microcontrollers and processors? A: Yes, it is compatible with various microcontrollers and processors that support standard SRAM interfaces like asynchronous parallel or synchronous burst modes.
Q: What is the power consumption of IDT71V416L10PH? A: The power consumption is relatively low, making it suitable for battery-powered devices. The exact values can be found in the datasheet.
Q: Does IDT71V416L10PH have any built-in error correction capabilities? A: No, it does not have built-in error correction capabilities. However, external error correction techniques can be implemented if required.
Q: Can IDT71V416L10PH operate in harsh environments? A: It has a wide operating temperature range and can withstand moderate environmental conditions, but it may not be suitable for extreme temperatures or high levels of humidity.
Q: What is the package type for IDT71V416L10PH? A: It is available in a 44-pin TSOP (Thin Small Outline Package) or a 48-pin TQFP (Thin Quad Flat Package).
Q: Are there any application notes or reference designs available for IDT71V416L10PH? A: Yes, the manufacturer provides application notes and reference designs that can help with the integration and usage of IDT71V416L10PH in various technical solutions.

Please note that these answers are general and may vary depending on specific requirements and use cases.