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IDT71V416L12YI

IDT71V416L12YI

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics: High-speed, low-power, synchronous static random access memory (SRAM)
  • Package: 44-pin Thin Small Outline Package (TSOP)
  • Essence: Provides fast and reliable data storage for various electronic devices
  • Packaging/Quantity: Available in tape and reel packaging, with a quantity of 250 units per reel

Specifications

  • Memory Size: 4 Megabits (4M x 16)
  • Operating Voltage: 3.3V
  • Access Time: 12 ns
  • Data Retention: Greater than 10 years
  • Operating Temperature Range: -40°C to +85°C
  • Interface: Synchronous

Pin Configuration

The IDT71V416L12YI has a total of 44 pins. The pin configuration is as follows:

  1. VCCQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. GND
  11. DQ8
  12. DQ9
  13. DQ10
  14. DQ11
  15. DQ12
  16. DQ13
  17. DQ14
  18. DQ15
  19. VCCQ
  20. A0
  21. A1
  22. A2
  23. A3
  24. A4
  25. A5
  26. A6
  27. A7
  28. A8
  29. A9
  30. A10
  31. A11
  32. A12
  33. A13
  34. A14
  35. A15
  36. WE#
  37. OE#
  38. CE#
  39. UB#
  40. LB#
  41. CLK
  42. VCC
  43. GND
  44. NC

Functional Features

  • High-speed operation allows for quick data access and retrieval.
  • Low-power consumption makes it suitable for battery-powered devices.
  • Synchronous interface ensures efficient communication with the host system.
  • Reliable data retention guarantees long-term storage of information.

Advantages and Disadvantages

Advantages: - Fast access time enhances overall system performance. - Low power consumption prolongs battery life in portable devices. - Synchronous interface simplifies integration into existing systems. - Reliable data retention ensures data integrity over time.

Disadvantages: - Limited memory size compared to other memory devices. - Higher cost per bit compared to larger capacity memory chips. - Requires proper handling and static discharge precautions during installation.

Working Principles

The IDT71V416L12YI operates as a synchronous SRAM, utilizing a clock signal to synchronize data transfers between the memory device and the host system. When the chip select (CE#) and output enable (OE#) signals are active, the device can read or write data on the rising edge of the clock signal (CLK). The address lines (A0-A15) specify the location in memory where data is accessed.

Detailed Application Field Plans

The IDT71V416L12YI is commonly used in various electronic devices that require fast and reliable data storage. Some application fields include:

  1. Computer Systems: Used as cache memory to improve system performance.
  2. Networking Equipment: Provides temporary storage for packet buffering and routing tables.
  3. Telecommunications Devices: Stores call records and configuration data.
  4. Industrial Control Systems: Used for data logging and real-time processing.
  5. Consumer Electronics: Enables quick data access in digital cameras, gaming consoles, and set-top boxes.

Detailed and Complete Alternative Models

  1. IDT71V416S: Similar to IDT71V416L12YI but operates at a faster access time of 10 ns.
  2. IDT71V424: Offers double the memory size with 8 Megabits (4M x 32) configuration.
  3. IDT71V432: Provides even higher capacity with 16 Megabits (4M x 64) configuration.
  4. IDT71V416L15: Operates at a slower access time of 15 ns but offers lower power consumption.

These alternative models offer different specifications and features to cater to specific application requirements.

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기술 솔루션에 IDT71V416L12YI 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

Sure! Here are 10 common questions and answers related to the application of IDT71V416L12YI in technical solutions:

  1. Q: What is IDT71V416L12YI? A: IDT71V416L12YI is a high-speed, low-power CMOS static RAM (SRAM) chip with a capacity of 4 Megabits (Mbit).

  2. Q: What are the key features of IDT71V416L12YI? A: Some key features include a 12 ns access time, low power consumption, asynchronous operation, and a wide operating voltage range.

  3. Q: What are the typical applications of IDT71V416L12YI? A: This SRAM chip is commonly used in various technical solutions such as networking equipment, telecommunications systems, industrial automation, and embedded systems.

  4. Q: How does IDT71V416L12YI handle power consumption? A: IDT71V416L12YI has a low-power standby mode that reduces power consumption when the chip is not actively accessed.

  5. Q: Can IDT71V416L12YI operate at different voltages? A: Yes, this chip can operate within a wide voltage range of 3.0V to 3.6V, making it compatible with different system requirements.

  6. Q: Does IDT71V416L12YI support simultaneous read and write operations? A: No, this SRAM chip does not support simultaneous read and write operations. It operates in an asynchronous manner.

  7. Q: What is the maximum operating frequency of IDT71V416L12YI? A: The maximum operating frequency of this SRAM chip is determined by its 12 ns access time, which corresponds to a maximum frequency of approximately 83 MHz.

  8. Q: Can IDT71V416L12YI be used in battery-powered devices? A: Yes, this chip's low power consumption makes it suitable for use in battery-powered devices where energy efficiency is crucial.

  9. Q: Does IDT71V416L12YI have any built-in error correction capabilities? A: No, this SRAM chip does not have built-in error correction capabilities. Additional error correction mechanisms may need to be implemented if required.

  10. Q: Are there any specific design considerations when using IDT71V416L12YI? A: Some design considerations include proper decoupling capacitor placement, signal integrity management, and adherence to the recommended operating conditions specified in the datasheet.

Please note that these answers are general and may vary depending on the specific requirements and implementation of the technical solution.