IDT71V416S10Y

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static RAM (SRAM)
• Package: 44-pin Plastic TSOP II
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Size: 4 Megabits (4M x 16)
• Access Time: 10 nanoseconds (ns)
• Operating Voltage: 3.3 Volts (V)
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 10 years
• Standby Current: Less than 5 microamps (µA)
• Package Dimensions: 12.8mm x 20.4mm x 1.2mm

Pin Configuration

The IDT71V416S10Y has a total of 44 pins. The pin configuration is as follows:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. A8
10. A9
11. A10
12. A11
13. A12
14. A13
15. A14
16. A15
17. /CE1
18. /CE2
19. /OE
20. /WE
21. I/O0
22. I/O1
23. I/O2
24. I/O3
25. VCC
26. GND
27. I/O4
28. I/O5
29. I/O6
30. I/O7
31. I/O8
32. I/O9
33. I/O10
34. I/O11
35. I/O12
36. I/O13
37. I/O14
38. I/O15
39. /LB
40. /UB
41. /CE3
42. /CE4
43. /OE2
44. /WE2

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low-power consumption makes it suitable for battery-powered devices.
• Synchronous design ensures reliable and efficient data transfer.
• Easy integration into existing circuit designs due to standard pin configuration.

Advantages and Disadvantages

Advantages: - Fast access time enables high-performance applications. - Low standby current prolongs battery life in portable devices. - Reliable data retention ensures data integrity over extended periods. - Standard package size facilitates easy replacement or upgrade.

Disadvantages: - Limited memory size may not be sufficient for certain applications. - Higher cost compared to other memory technologies. - Sensitivity to voltage fluctuations may require additional voltage regulation circuitry.

Working Principles

The IDT71V416S10Y is a synchronous SRAM that stores and retrieves data using electronic circuits. It operates by synchronizing its internal operations with an external clock signal. When the chip select (/CE) and output enable (/OE) signals are active, the device can read or write data on the input/output pins (I/O). The write enable (/WE) signal determines whether the device performs a read or write operation.

Detailed Application Field Plans

The IDT71V416S10Y is commonly used in various applications, including:

1. Computer systems: Used as cache memory to improve overall system performance.
2. Networking equipment: Provides fast data buffering capabilities in routers and switches.
3. Telecommunications devices: Used for data storage in communication systems.
4. Industrial control systems: Enables quick data access in automation and control applications.
5. Consumer electronics: Used in gaming consoles, set-top boxes, and other multimedia devices.

Detailed and Complete Alternative Models

1. IDT71V416S10PH: Similar to IDT71V416S10Y but operates at a different temperature range (-40°C to +125°C).
2. IDT71V416L10PH: Low-power variant of IDT71V416S10Y with reduced standby current.
3. IDT71V416S15Y: Higher-speed version of IDT71V416S10Y with a 15 ns access time.

These alternative models offer similar functionality but may have variations in operating characteristics or package options.

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