IDT71V416S10Y8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static RAM (SRAM)
• Package: 44-pin TSOP (Thin Small Outline Package)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Size: 4 Megabits (4M x 16)
• Access Time: 10 nanoseconds (ns)
• Operating Voltage: 3.3 Volts (V)
• Operating Temperature: -40°C to +85°C
• Data Retention: More than 10 years
• Interface: Synchronous

Detailed Pin Configuration

The IDT71V416S10Y8 has a total of 44 pins. The pin configuration is as follows:

1. VCCQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSSQ
11. WE#
12. CAS#
13. RAS#
14. A0
15. A1
16. A2
17. A3
18. A4
19. A5
20. A6
21. A7
22. A8
23. A9
24. A10
25. A11
26. A12
27. A13
28. A14
29. A15
30. A16
31. A17
32. A18
33. A19
34. A20
35. A21
36. A22
37. A23
38. VCC
39. OE#
40. DQ8
41. DQ9
42. DQ10
43. DQ11
44. VSS

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low-power consumption makes it suitable for battery-powered devices.
• Synchronous interface ensures efficient communication with the processor.
• Reliable data retention ensures long-term storage of information.

Advantages and Disadvantages

Advantages: - Fast access time enables high-performance applications. - Low power consumption extends battery life in portable devices. - Synchronous interface simplifies system design and improves efficiency.

Disadvantages: - Limited memory size compared to other memory devices. - Higher cost per bit compared to larger capacity memory chips. - Requires careful handling and proper ESD precautions during installation.

Working Principles

The IDT71V416S10Y8 is a synchronous SRAM that stores and retrieves data using electronic circuits. It operates by synchronizing its internal operations with an external clock signal provided by the system's processor. When the processor requests data, the SRAM quickly responds by accessing the requested information from its memory cells. The retrieved data is then made available to the processor for further processing or storage.

Detailed Application Field Plans

The IDT71V416S10Y8 is commonly used in various electronic systems that require fast and reliable data storage. Some of the application fields where this memory device finds utility include:

1. Computer Systems: Used as cache memory or main memory in desktops, laptops, and servers.
2. Networking Equipment: Employed in routers, switches, and network cards for buffering and storing data packets.
3. Telecommunications: Utilized in base stations, voice/data switches, and communication modules for data buffering and storage.
4. Consumer Electronics: Integrated into gaming consoles, set-top boxes, and digital cameras for data storage and retrieval.
5. Industrial Automation: Used in control systems, PLCs (Programmable Logic Controllers), and robotics for storing program instructions and data.

Detailed and Complete Alternative Models

1. IDT71V416S10PHG: Similar to IDT71V416S10Y8 but operates at a different temperature range (-40°C to +125°C).
2. IDT71V416S10PH: Same specifications as IDT71V416S10Y8 but available in a 48-pin TSOP package.
3. IDT71V416S10P: Lower power version of IDT71V416S10Y8 with reduced operating voltage (2.5V).

These alternative models provide similar functionality and can be used as substitutes based on specific application requirements.

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