IDT71V416S12Y8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static RAM (SRAM)
• Package: 44-pin TSOP (Thin Small Outline Package)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, with a quantity of 250 units per reel

Specifications

• Memory Size: 4 Megabits (4M x 16)
• Operating Voltage: 3.3V
• Access Time: 8 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 10 years
• Standby Current: Less than 1 μA
• Package Dimensions: 12.8mm x 20.4mm x 1.2mm

Detailed Pin Configuration

The IDT71V416S12Y8 has a total of 44 pins. The pin configuration is as follows:

1. A0-A18: Address Inputs
2. DQ0-DQ15: Data Inputs/Outputs
3. WE#: Write Enable Input
4. OE#: Output Enable Input
5. CE#: Chip Enable Input
6. UB#/LB#: Upper Byte/Lower Byte Enable Inputs
7. VCC: Power Supply
8. GND: Ground

(Note: The remaining pins are not listed here for brevity.)

Functional Features

• High-speed operation allows for quick data access and transfer.
• Low-power consumption makes it suitable for battery-powered devices.
• Synchronous design ensures reliable and synchronized data transfers.
• Easy integration into various electronic systems due to its standard interface.

Advantages and Disadvantages

Advantages: - Fast access time enhances overall system performance. - Low standby current prolongs battery life in portable devices. - Reliable data retention ensures data integrity over extended periods. - Compact package size saves board space in electronic designs.

Disadvantages: - Limited memory capacity compared to newer generations of SRAM. - Higher cost per bit compared to other memory technologies. - Sensitivity to electromagnetic interference (EMI) due to its high-speed operation.

Working Principles

The IDT71V416S12Y8 is a synchronous SRAM that stores and retrieves data using an array of memory cells. It operates based on the principle of storing binary information as electrical charges within these memory cells. The address inputs are used to select the desired memory location, while the data inputs/outputs facilitate the transfer of data between the device and the external system. The control inputs (WE#, OE#, CE#, UB#/LB#) enable various operations such as reading, writing, and enabling specific byte accesses.

Detailed Application Field Plans

The IDT71V416S12Y8 is commonly used in various applications that require fast and reliable data storage and retrieval capabilities. Some of the typical application fields include:

1. Computer Systems:

   • Cache memory
   • Buffer memory
   • High-speed data storage

2. Communication Equipment:

   • Network routers and switches
   • Data communication modules
   • Wireless base stations

3. Consumer Electronics:

   • Set-top boxes
   • Digital cameras
   • Gaming consoles

4. Industrial Control Systems:

   • Programmable logic controllers (PLCs)
   • Robotics systems
   • Automation equipment

Detailed and Complete Alternative Models

1. IDT71V416L: Similar to IDT71V416S12Y8, but with a lower operating voltage of 2.5V.
2. IDT71V416S: Similar to IDT71V416S12Y8, but with a faster access time of 6 ns.
3. IDT71V416S15: Similar to IDT71V416S12Y8, but with a slower access time of 15 ns.

(Note: The list above provides only a few alternative models for reference.)

This concludes the encyclopedia entry for the IDT71V416S12Y8, a high-speed and low-power synchronous SRAM used in various electronic systems for efficient data storage and retrieval.