IDT71V416S12YI8

Product Overview

Category

The IDT71V416S12YI8 belongs to the category of semiconductor memory devices.

Use

This product is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Reliable performance

Package

The IDT71V416S12YI8 is available in a compact integrated circuit (IC) package.

Essence

The essence of this product lies in its ability to provide fast and efficient data storage and retrieval capabilities.

Packaging/Quantity

The IDT71V416S12YI8 is typically packaged in reels or trays, with each package containing a specific quantity of ICs.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 4 Megabit (4M) x 16 bits
• Operating Voltage: 3.3V
• Access Time: 12 nanoseconds (ns)
• Data Retention: More than 10 years
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IDT71V416S12YI8 has a total of 44 pins, which are assigned specific functions. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. DQ8
27. DQ9
28. DQ10
29. DQ11
30. DQ12
31. DQ13
32. DQ14
33. DQ15
34. /WE
35. /OE
36. /CE2
37. /CE1
38. /CE0
39. /ZZ
40. GND
41. NC
42. NC
43. NC
44. VCC

Functional Features

• High-speed random access
• Non-volatile storage
• Low power consumption
• Easy integration into electronic systems
• Compatibility with various interfaces and protocols

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Large storage capacity
• Low power consumption
• Reliable performance
• Easy integration into electronic systems

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability beyond the specified storage capacity

Working Principles

The IDT71V416S12YI8 utilizes static random access memory (SRAM) technology. It stores digital information in a volatile manner, meaning that the stored data is lost when power is removed. The SRAM cells within the device use flip-flops to store each bit of data, allowing for fast read and write operations.

Detailed Application Field Plans

The IDT71V416S12YI8 finds applications in various electronic systems, including but not limited to: - Computer systems - Networking equipment - Communication devices - Industrial control systems - Automotive electronics - Consumer electronics

Detailed and Complete Alternative Models

1. IDT71V416L12YI - Similar specifications, lower operating voltage (2.5V)
2. IDT71V416S10PH - Similar specifications, lower access time (10ns)
3. IDT71V416S15PH - Similar specifications, higher access time (15ns)
4. IDT71V416L15YI - Similar specifications, lower operating voltage (2.5V), higher access time (15ns)

These alternative models offer similar functionality to the IDT71V416S12YI8 but may have slight variations in operating parameters or package options.

Note: The content provided above is a fictional representation and does not reflect the actual specifications or details of any specific product.