IDT71V416VL12BE

Product Overview

Category: Integrated Circuit (IC)

Use: Memory device

Characteristics: - High-speed static random-access memory (SRAM) - Low power consumption - 4 Megabit (4M) capacity - 12ns access time - 3.3V power supply - 44-pin plastic TSOP package

Essence: The IDT71V416VL12BE is a high-performance SRAM IC designed for various applications that require fast and reliable data storage.

Packaging/Quantity: The IDT71V416VL12BE is available in a 44-pin plastic Thin Small Outline Package (TSOP). It is typically sold individually or in small quantities.

Specifications

• Capacity: 4 Megabit (4M)
• Access Time: 12ns
• Power Supply: 3.3V
• Package Type: 44-pin plastic TSOP

Detailed Pin Configuration

The IDT71V416VL12BE has a total of 44 pins, each serving a specific function. Here is a detailed pin configuration:

1. A0-A19: Address Inputs
2. DQ0-DQ7: Data Inputs/Outputs
3. WE#: Write Enable Input
4. OE#: Output Enable Input
5. CE#: Chip Enable Input
6. VCC: Power Supply (+3.3V)
7. GND: Ground (0V)

(Note: The pin configuration may vary depending on the manufacturer's specifications.)

Functional Features

• High-speed operation: The IDT71V416VL12BE offers fast access times, making it suitable for applications that require quick data retrieval.
• Low power consumption: This IC is designed to minimize power usage, making it energy-efficient and suitable for battery-powered devices.
• Reliable data storage: The SRAM technology used in this IC ensures reliable data retention and retrieval.
• Easy integration: The IDT71V416VL12BE can be easily integrated into various electronic systems due to its standard pin configuration and package.

Advantages and Disadvantages

Advantages: - High-speed operation allows for quick data access. - Low power consumption prolongs battery life in portable devices. - Reliable data storage ensures data integrity. - Easy integration into existing electronic systems.

Disadvantages: - Limited capacity (4 Megabit) compared to other memory devices. - Higher cost per bit compared to larger capacity memory devices.

Working Principles

The IDT71V416VL12BE is based on Static Random-Access Memory (SRAM) technology. It stores data using flip-flops, which retain their state as long as power is supplied. When an address is provided, the corresponding data is accessed and made available at the output pins. The write enable (WE#), output enable (OE#), and chip enable (CE#) inputs control the read and write operations.

Detailed Application Field Plans

The IDT71V416VL12BE is widely used in various applications that require high-speed and reliable data storage, such as: - Computer systems - Networking equipment - Telecommunications devices - Industrial automation systems - Consumer electronics

Detailed and Complete Alternative Models

1. IDT71V416S: Similar to IDT71V416VL12BE but with a different package type (SOJ).
2. IDT71V416YL: Similar to IDT71V416VL12BE but with a lower access time (10ns).
3. IDT71V416Z: Similar to IDT71V416VL12BE but with a higher capacity (8 Megabit).

(Note: The alternative models mentioned above are examples and may vary based on availability and manufacturer specifications.)

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