IDT71V416VL15BE

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 44-pin Plastic Thin Quad Flat Pack (TQFP)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Organization: 4 Meg x 16
• Voltage Supply: 3.3V
• Access Time: 15 ns
• Operating Temperature Range: -40°C to +85°C
• Standby Current: 10 µA (typical)
• Package Dimensions: 10mm x 10mm

Detailed Pin Configuration

The IDT71V416VL15BE has a total of 44 pins. The pin configuration is as follows:

1. A0-A19: Address Inputs
2. DQ0-DQ15: Data Inputs/Outputs
3. WE: Write Enable
4. OE: Output Enable
5. CE1, CE2: Chip Enables
6. UB, LB: Byte Enables
7. CLK: Clock Input
8. VCC: Power Supply
9. GND: Ground

Functional Features

• High-speed operation: The IDT71V416VL15BE offers fast access times, making it suitable for applications that require quick data retrieval.
• Low power consumption: With a standby current of only 10 µA, this memory device helps conserve energy in battery-powered devices.
• Synchronous operation: The device synchronizes its operations with an external clock signal, ensuring reliable data transfer.
• Easy integration: The 44-pin TQFP package allows for easy integration into various electronic systems.

Advantages and Disadvantages

Advantages: - High-speed operation enables efficient data processing. - Low power consumption prolongs battery life in portable devices. - Synchronous operation ensures reliable data transfer. - Easy integration due to the compact TQFP package.

Disadvantages: - Limited storage capacity compared to other memory devices. - Relatively higher cost per unit compared to alternative models.

Working Principles

The IDT71V416VL15BE is a synchronous SRAM that stores and retrieves data using electronic circuits. It operates by receiving address inputs, which specify the location of the data to be accessed. The device synchronizes its operations with an external clock signal, allowing for precise timing of data transfers. When enabled, the SRAM reads or writes data from/to the specified memory location based on the control signals received.

Detailed Application Field Plans

The IDT71V416VL15BE is commonly used in various applications, including:

1. Computer Systems: Used as cache memory to improve system performance.
2. Networking Equipment: Provides fast data buffering capabilities in routers and switches.
3. Telecommunications: Used in base stations and network infrastructure equipment for data storage and retrieval.
4. Industrial Control Systems: Enables quick data processing in automation and control systems.
5. Consumer Electronics: Used in gaming consoles, set-top boxes, and digital cameras for high-speed data storage.

Detailed and Complete Alternative Models

1. Samsung K6R4016V1D-JC10: 4 Meg x 16 SRAM, 10 ns access time, 44-pin TSOP package.
2. Micron MT45W4MW16BFB-708 WT:B: 4 Meg x 16 SRAM, 7.5 ns access time, 48-ball VFBGA package.
3. Cypress CY62157EV30LL-45ZSXI: 4 Meg x 16 SRAM, 45 ns access time, 48-pin TSOP package.

These alternative models offer similar functionality to the IDT71V416VL15BE and can be considered based on specific application requirements.

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