IDT71V416VS10PHI8

Product Overview

Category

The IDT71V416VS10PHI8 belongs to the category of integrated circuits (ICs) and specifically falls under the category of static random-access memory (SRAM) chips.

Use

This product is primarily used for storing and retrieving digital information in electronic devices. It provides high-speed, non-volatile memory storage, making it suitable for various applications in the field of electronics.

Characteristics

• High-speed operation: The IDT71V416VS10PHI8 offers fast access times, allowing for quick data retrieval.
• Non-volatile memory: The stored data remains intact even when power is removed, ensuring data persistence.
• Low power consumption: This SRAM chip is designed to minimize power usage, making it energy-efficient.
• Compact package: The IDT71V416VS10PHI8 is available in a small form factor, enabling its integration into space-constrained electronic devices.

Package and Quantity

The IDT71V416VS10PHI8 is typically packaged in a surface-mount package, such as a ball grid array (BGA) or a thin small outline package (TSOP). The exact package type may vary depending on the manufacturer. It is commonly available in reels or trays containing multiple units.

Specifications

• Memory capacity: 4 Megabits (4Mb)
• Organization: 512K words x 8 bits
• Supply voltage: 3.3V
• Access time: 10 nanoseconds (ns)
• Operating temperature range: -40°C to +85°C
• Data retention: Greater than 20 years

Pin Configuration

The IDT71V416VS10PHI8 has a total of 44 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. OE#
44. GND

Functional Features

• High-speed access: The IDT71V416VS10PHI8 offers fast read and write operations, enabling efficient data transfer.
• Easy integration: It can be easily interfaced with other electronic components due to its standard pin configuration and compatibility with common communication protocols.
• Low power consumption: This SRAM chip is designed to minimize power usage, making it suitable for battery-powered devices.
• Reliable data storage: The non-volatile nature of the memory ensures that stored data remains intact even during power interruptions.

Advantages and Disadvantages

Advantages

• Fast access times enable quick data retrieval.
• Non-volatile memory ensures data persistence.
• Low power consumption makes it energy-efficient.
• Compact package allows for easy integration into space-constrained devices.

Disadvantages

• Limited memory capacity compared to other storage technologies.
• Relatively higher cost per unit compared to alternative memory solutions.

Working Principles

The IDT71V416VS10PHI8 operates based on the principles of static random-access memory. It utilizes a combination of flip-flops and logic gates to store and retrieve digital information. The stored data is retained as long as power is supplied to the chip, allowing for quick access without the need for refreshing.

Detailed Application Field Plans

The IDT71V416VS10PHI8 finds applications in various electronic devices and systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Consumer electronics - Industrial control systems - Automotive electronics

Alternative Models

For those seeking alternatives to the IDT71V416VS10PHI8, the following models offer similar functionality and can be considered: - Micron MT45W4MW16BFB-708 WT - Samsung K6R4016V1D-UI10 - Cypress CY7C1041DV33-10ZSXI

These alternative models provide comparable specifications and features, making