IDT71V416VS12BE

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 44-pin Plastic Thin Quad Flat Pack (TQFP)
• Essence: Provides high-performance data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Organization: 4 Meg x 16
• Voltage Range: 3.0V - 3.6V
• Access Time: 12ns
• Operating Temperature Range: -40°C to +85°C
• Standby Current: 10µA (typical)
• Data Retention: 10 years (minimum)

Detailed Pin Configuration

The IDT71V416VS12BE has a total of 44 pins. The pin configuration is as follows:

1. VCCQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. GND
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VCCQ
20. WE#
21. OE#
22. A0
23. A1
24. A2
25. A3
26. A4
27. A5
28. A6
29. A7
30. A8
31. A9
32. A10
33. A11
34. A12
35. A13
36. A14
37. A15
38. VCCQ
39. CE#
40. UB#
41. LB#
42. CLK
43. GND
44. VCC

Functional Features

• High-speed operation: The IDT71V416VS12BE offers fast access times, allowing for efficient data retrieval and storage.
• Low-power consumption: Designed to minimize power usage, making it suitable for battery-powered devices and energy-efficient applications.
• Synchronous interface: The memory operates synchronously with an external clock signal, ensuring reliable data transfer.
• Easy integration: The IC can be easily integrated into various electronic systems due to its standard pin configuration and package.

Advantages and Disadvantages

Advantages: - High-speed performance enables quick data access. - Low-power consumption prolongs battery life in portable devices. - Synchronous interface ensures reliable data transfer. - Easy integration into different electronic systems.

Disadvantages: - Limited storage capacity compared to other memory technologies. - Relatively higher cost per unit compared to some alternative memory options.

Working Principles

The IDT71V416VS12BE is a synchronous SRAM that stores and retrieves data using electronic circuits. It operates by receiving address signals from the system, which specify the location of the data to be accessed. The data is then read or written through the data input/output pins based on control signals such as write enable (WE#) and output enable (OE#). The memory operates synchronously with an external clock signal, ensuring proper timing for data transfer.

Detailed Application Field Plans

The IDT71V416VS12BE is commonly used in various applications, including:

1. Computer Systems: Used as cache memory in high-performance computers to improve data access speed.
2. Networking Equipment: Utilized in routers, switches, and network cards for buffering and temporary storage of data packets.
3. Telecommunications: Used in base stations, switches, and communication devices for fast data processing and storage.
4. Industrial Control Systems: Employed in automation systems, robotics, and control units for reliable and high-speed data storage.

Detailed and Complete Alternative Models

1. IDT71V416L: Low-power version of the IDT71V416VS12BE with similar specifications.
2. IDT71V416S: Higher-speed variant of the IDT71V416VS12BE with reduced access time.
3. IDT71V416VL: Low-voltage version of the IDT71V416VS12BE designed for lower power supply voltages.

Note: The above alternative models are provided as examples and may not represent an exhaustive list of alternatives available in the market.

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