IDT71V416VS12PHG

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics:
  • High-speed performance
  • Low power consumption
  • Large storage capacity
• Package: Plastic Grid Array (PGA)
• Essence: Non-volatile memory
• Packaging/Quantity: Tray packaging, quantity varies

Specifications

• Manufacturer: Integrated Device Technology Inc.
• Part Number: IDT71V416VS12PHG
• Memory Type: Static Random Access Memory (SRAM)
• Organization: 4 Meg x 16
• Voltage Supply: 3.3V
• Access Time: 12 ns
• Operating Temperature Range: -40°C to +85°C
• Pin Count: 100 pins

Detailed Pin Configuration

The IDT71V416VS12PHG has a total of 100 pins. The pin configuration is as follows:

1. VCCQ
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. DQ8
27. DQ9
28. DQ10
29. DQ11
30. DQ12
31. DQ13
32. DQ14
33. DQ15
34. /WE
35. /OE
36. /CE2
37. /CE1
38. /CE0
39. /ZZ
40. VSSQ

(Continued...)

Functional Features

The IDT71V416VS12PHG offers the following functional features:

• High-speed operation: The SRAM provides fast access times, allowing for efficient data retrieval and storage.
• Low power consumption: The device is designed to minimize power usage, making it suitable for battery-powered applications.
• Large storage capacity: With a capacity of 4 Meg x 16, the memory device can store a significant amount of data.
• Easy integration: The IDT71V416VS12PHG can be easily integrated into various electronic systems due to its standard pin configuration.

Advantages and Disadvantages

Advantages: - High-speed performance enables quick data access. - Low power consumption prolongs battery life in portable devices. - Large storage capacity accommodates extensive data requirements. - Easy integration simplifies system design and implementation.

Disadvantages: - Limited compatibility with certain systems due to specific pin configuration. - Relatively higher cost compared to other memory technologies. - Vulnerable to data loss in case of power failure without proper backup mechanisms.

Working Principles

The IDT71V416VS12PHG operates based on the principles of static random access memory (SRAM). It stores data using flip-flop circuits, which retain information as long as power is supplied. The memory cells are organized in a 4 Meg x 16 configuration, allowing for simultaneous read and write operations. The device utilizes address lines to select specific memory locations and data lines for input/output operations.

Detailed Application Field Plans

The IDT71V416VS12PHG is commonly used in various applications, including:

1. Computer Systems:

   • Cache memory in high-performance processors
   • Buffer memory in networking equipment

2. Communication Devices:

   • Data storage in routers and switches
   • Buffer memory in telecommunications systems

3. Industrial Control Systems:

   • Data logging and buffering in automation systems
   • Memory for programmable logic controllers (PLCs)

4. Consumer Electronics:

   • Storage for gaming consoles and handheld devices
   • Buffer memory in digital cameras and camcorders

Detailed and Complete Alternative Models

1. Samsung K6R4016V1D-UI10: 4 Meg x 16 SRAM, 12 ns access time, 3.3V voltage supply.
2. Micron MT45W4MW16BFB-708 WT:B: 4 Meg x 16 SRAM, 12 ns access time, 3.3V voltage supply.
3. Cypress CY62157EV30LL-45ZSXI: 4 Meg x 16 SRAM, 12 ns access time, 3.3V voltage supply.

These alternative models offer similar specifications and functionality to the IDT71V416VS12PHG and can be considered as substitutes in various applications.

(Note: The