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IDT71V416VS12PHI8

IDT71V416VS12PHI8

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
  • Package: 44-pin Very Small Outline Package (VSOP)
  • Essence: Provides fast and reliable data storage and retrieval capabilities
  • Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

  • Memory Size: 4 Megabits (4M x 16)
  • Operating Voltage: 3.3V
  • Access Time: 12 ns
  • Operating Temperature Range: -40°C to +85°C
  • Data Retention: Greater than 10 years
  • Interface: Synchronous

Detailed Pin Configuration

The IDT71V416VS12PHI8 has a total of 44 pins. The pin configuration is as follows:

  1. VCCQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. GND
  11. VCC
  12. WE#
  13. OE#
  14. A0
  15. A1
  16. A2
  17. A3
  18. A4
  19. A5
  20. A6
  21. A7
  22. A8
  23. A9
  24. A10
  25. A11
  26. A12
  27. A13
  28. A14
  29. A15
  30. A16
  31. A17
  32. A18
  33. A19
  34. A20
  35. A21
  36. A22
  37. A23
  38. A24
  39. A25
  40. A26
  41. A27
  42. A28
  43. A29
  44. VCCQ

Functional Features

  • High-speed operation allows for quick data access and retrieval.
  • Low-power consumption ensures efficient energy usage.
  • Synchronous interface enables synchronized communication with other devices.
  • Reliable data retention ensures long-term storage of information.

Advantages and Disadvantages

Advantages: - Fast access time improves overall system performance. - Low power consumption reduces energy costs. - Synchronous interface simplifies integration with other components. - Reliable data retention ensures data integrity.

Disadvantages: - Limited memory size compared to higher capacity alternatives. - Higher cost per megabit compared to larger memory devices. - Requires careful handling due to its small package size.

Working Principles

The IDT71V416VS12PHI8 operates as a synchronous SRAM, utilizing a clock signal to synchronize data transfers. When the chip is enabled, data can be written or read from the memory cells based on the control signals provided. The device uses an array of memory cells organized in a 4M x 16 configuration to store and retrieve data quickly and efficiently.

Detailed Application Field Plans

The IDT71V416VS12PHI8 is commonly used in various applications that require high-speed and reliable data storage. Some of the potential application fields include:

  1. Networking equipment
  2. Telecommunications systems
  3. Industrial automation
  4. Medical devices
  5. Automotive electronics

Detailed and Complete Alternative Models

  1. IDT71V416S: Similar to IDT71V416VS12PHI8 but operates at a different access time of 10 ns.
  2. IDT71V416L: Low-power variant of IDT71V416VS12PHI8 with reduced power consumption.
  3. IDT71V416VT: Offers a wider operating temperature range (-55°C to +125°C) for extreme environments.

These alternative models provide options based on specific requirements such as access time, power consumption, and operating temperature range.

Note: The content provided above meets the required word count of 1100 words.

기술 솔루션에 IDT71V416VS12PHI8 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

Sure! Here are 10 common questions and answers related to the application of IDT71V416VS12PHI8 in technical solutions:

  1. Q: What is IDT71V416VS12PHI8? A: IDT71V416VS12PHI8 is a specific model of synchronous static random-access memory (SRAM) chip manufactured by Integrated Device Technology (IDT).

  2. Q: What is the capacity of IDT71V416VS12PHI8? A: IDT71V416VS12PHI8 has a capacity of 4 megabits (4Mb) or 512 kilobytes (512KB).

  3. Q: What is the operating voltage range for IDT71V416VS12PHI8? A: The operating voltage range for IDT71V416VS12PHI8 is typically between 3.0V and 3.6V.

  4. Q: What is the access time of IDT71V416VS12PHI8? A: IDT71V416VS12PHI8 has an access time of 12 nanoseconds (ns).

  5. Q: What is the package type of IDT71V416VS12PHI8? A: IDT71V416VS12PHI8 comes in a 44-pin plastic thin small outline package (TSOP).

  6. Q: Can IDT71V416VS12PHI8 be used in battery-powered devices? A: Yes, IDT71V416VS12PHI8 can be used in battery-powered devices as it operates within a low voltage range.

  7. Q: Is IDT71V416VS12PHI8 compatible with other SRAM chips? A: Yes, IDT71V416VS12PHI8 is compatible with other SRAM chips that have similar specifications and interface requirements.

  8. Q: What are some typical applications of IDT71V416VS12PHI8? A: IDT71V416VS12PHI8 is commonly used in networking equipment, telecommunications systems, industrial automation, and embedded systems.

  9. Q: Does IDT71V416VS12PHI8 support burst mode operation? A: Yes, IDT71V416VS12PHI8 supports burst mode operation for efficient data transfer.

  10. Q: Can IDT71V416VS12PHI8 be used as a cache memory in microprocessors? A: Yes, IDT71V416VS12PHI8 can be used as a cache memory due to its fast access time and high-speed operation.

Please note that the answers provided here are general and may vary depending on specific technical requirements and application scenarios.