IDT71V416YL15Y8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 44-pin TSOP (Thin Small Outline Package)
• Essence: Provides fast and reliable data storage and retrieval capabilities for various electronic devices
• Packaging/Quantity: Available in tape and reel packaging, with a quantity of 250 units per reel

Specifications

• Memory Size: 4 Megabits (4Mbit)
• Organization: 512K words x 8 bits
• Operating Voltage: 3.3V
• Access Time: 15 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 10 years
• Standby Current: Less than 5 mA
• Package Dimensions: 12.8mm x 20.4mm x 1.2mm

Pin Configuration

The IDT71V416YL15Y8 has a total of 44 pins. The pin configuration is as follows:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. A8
10. A9
11. A10
12. A11
13. A12
14. A13
15. A14
16. A15
17. A16
18. A17
19. A18
20. A19
21. A20
22. A21
23. A22
24. A23
25. VCC
26. DQ0
27. DQ1
28. DQ2
29. DQ3
30. DQ4
31. DQ5
32. DQ6
33. DQ7
34. GND
35. WE#
36. OE#
37. CE#
38. UB#
39. LB#
40. CLK
41. CLKEN#
42. VCC
43. VCC
44. GND

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low-power consumption makes it suitable for battery-powered devices.
• Synchronous design ensures reliable data transfer and synchronization with the system clock.
• Easy integration into various electronic systems due to its standard pin configuration.
• Provides non-volatile storage capabilities, retaining data even when power is disconnected.

Advantages and Disadvantages

Advantages: - Fast access time enables efficient data processing. - Low standby current helps conserve power. - Reliable data retention ensures data integrity. - Suitable for a wide range of applications due to its compatibility with different systems.

Disadvantages: - Limited memory size compared to newer memory technologies. - Higher cost per bit compared to other memory options. - Requires external control signals for proper operation.

Working Principles

The IDT71V416YL15Y8 operates as a synchronous SRAM, where data is stored in memory cells organized in a matrix. The memory cells can be accessed and modified by providing the appropriate address and control signals. The synchronous design ensures that data transfers occur in sync with the system clock, allowing for efficient data processing.

Detailed Application Field Plans

The IDT71V416YL15Y8 is commonly used in various electronic devices that require fast and reliable data storage and retrieval capabilities. Some of the application fields where this memory device finds utility include:

1. Computer Systems: Used as cache memory or main memory in computer systems to enhance data processing speed.
2. Networking Equipment: Employed in routers, switches, and network cards to store routing tables and buffer data packets.
3. Telecommunications: Utilized in communication systems for storing voice and data information.
4. Industrial Control Systems: Integrated into control units and PLCs (Programmable Logic Controllers) for data storage and processing.
5. Automotive Electronics: Used in automotive applications such as engine control units, infotainment systems, and navigation systems.

Detailed and Complete Alternative Models

1. IDT71V416S: Similar to IDT71V416YL15Y8 but operates at a different access time of 10 ns.
2. IDT71V416Z: Offers the same memory size and organization but operates at a lower voltage of 2.5V.
3. IDT71V416L: Provides a larger memory size of 8 Megabits (8Mbit) with the same organization and characteristics.

These alternative models offer similar functionality and can be considered as alternatives based on specific requirements and system constraints.

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