IDT71V416YS10PHI8

Product Overview

Category

IDT71V416YS10PHI8 belongs to the category of semiconductor memory devices.

Use

It is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Reliable data retention
• Easy integration into electronic circuits

Package

IDT71V416YS10PHI8 is available in a compact and durable package, designed to protect the internal components from external factors such as moisture and physical damage.

Essence

The essence of IDT71V416YS10PHI8 lies in its ability to provide fast and reliable data storage and retrieval, making it an essential component in various electronic devices.

Packaging/Quantity

IDT71V416YS10PHI8 is typically packaged in trays or reels, with each package containing a specific quantity of devices. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 4 Megabit (4M) x 16
• Operating Voltage: 3.3V
• Access Time: 10 ns
• Data Retention: Up to 10 years
• Package Type: 48-pin TSOP (Thin Small Outline Package)

Detailed Pin Configuration

1. VCC - Power supply voltage
2. A0-A20 - Address inputs
3. DQ0-DQ15 - Data inputs/outputs
4. WE - Write Enable
5. OE - Output Enable
6. CE - Chip Enable
7. UB/LB - Upper Byte/Lower Byte control
8. CLK - Clock input
9. NC - No Connection
10. GND - Ground

(Note: This is a simplified pin configuration. Please refer to the datasheet for a complete and detailed pinout.)

Functional Features

• High-speed data access
• Non-volatile storage
• Low power consumption
• Easy integration into electronic systems
• Multiple chip enable options for flexible usage

Advantages

• Fast data access time
• Reliable data retention
• Low power consumption
• Compact package size
• Easy integration into existing electronic circuits

Disadvantages

• Limited storage capacity compared to other memory technologies
• Relatively higher cost per bit compared to some alternatives
• Sensitivity to external factors such as electromagnetic interference

Working Principles

IDT71V416YS10PHI8 operates based on the principles of static random access memory (SRAM). It stores digital information in a volatile manner, meaning that the stored data is lost when power is removed. The memory cells within the device use transistors to store and retrieve data quickly.

Detailed Application Field Plans

IDT71V416YS10PHI8 finds applications in various electronic systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

1. IDT71V416L - Similar specifications with lower power consumption
2. IDT71V416S - Similar specifications with faster access time
3. IDT71V416Z - Similar specifications with extended temperature range

(Note: This is a simplified list of alternative models. Please refer to the manufacturer's documentation for a complete and up-to-date list.)

In conclusion, IDT71V416YS10PHI8 is a high-performance semiconductor memory device that offers fast and reliable data storage capabilities. Its compact package, low power consumption, and easy integration make it suitable for various electronic applications. However, it has limitations in terms of storage capacity and cost compared to alternative memory technologies.