IDT71V416YS10Y

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics:
  • High-speed synchronous static random-access memory (SRAM)
  • Low power consumption
  • Large storage capacity
• Package: Surface Mount Technology (SMT)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, with a quantity of 2500 units per reel

Specifications

• Memory Type: Synchronous SRAM
• Organization: 4 Meg x 16 bits
• Operating Voltage: 3.3V
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 20 years
• Package Type: 48-pin Thin Small Outline Package (TSOP)

Detailed Pin Configuration

The IDT71V416YS10Y has a total of 48 pins. The pin configuration is as follows:

1. VDDQ - Power supply for I/O buffers
2. DQ0-DQ15 - Data input/output pins
3. GND - Ground
4. A0-A19 - Address input pins
5. WE - Write Enable
6. OE - Output Enable
7. CE1, CE2 - Chip Enable inputs
8. UB/LB - Upper Byte/Lower Byte control
9. CLK - Clock input
10. NC - No Connection

(Continues for the remaining pins...)

Functional Features

• High-speed operation allows for quick data access and transfer.
• Synchronous design ensures reliable and synchronized communication with other devices.
• Low power consumption makes it suitable for battery-powered applications.
• Large storage capacity provides ample space for storing data.

Advantages and Disadvantages

Advantages: - Fast access time enables efficient data processing. - Synchronous operation ensures reliable data transfer. - Low power consumption extends battery life in portable devices.

Disadvantages: - Limited storage capacity compared to other memory technologies. - Relatively higher cost per bit compared to alternative memory options.

Working Principles

The IDT71V416YS10Y operates based on the principles of synchronous SRAM. It stores and retrieves data using a clock signal that synchronizes the input/output operations. When the chip enable (CE) and output enable (OE) signals are active, the device can read or write data from/to the specified memory location. The address lines (A0-A19) determine the memory location being accessed, while the data lines (DQ0-DQ15) handle the actual data transfer.

Detailed Application Field Plans

The IDT71V416YS10Y is commonly used in various applications, including:

1. Computer Systems:

   • Cache memory
   • Buffer memory
   • High-speed data storage

2. Networking Equipment:

   • Switches
   • Routers
   • Network interface cards

3. Telecommunications:

   • Base stations
   • Voice/data communication systems

4. Consumer Electronics:

   • Set-top boxes
   • Digital TVs
   • Gaming consoles

Detailed and Complete Alternative Models

1. Cypress CY7C1041CV33 - 4 Meg x 16-bit synchronous SRAM
2. Samsung K6R4016V1D - 4 Meg x 16-bit synchronous SRAM
3. Micron MT48LC4M16A2 - 4 Meg x 16-bit synchronous SRAM

(Continues with additional alternative models...)

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