IDT71V416YS10Y8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics:
  • High-speed performance
  • Low power consumption
  • Large storage capacity
• Package: Surface Mount Technology (SMT)
• Essence: Non-volatile memory
• Packaging/Quantity: Tape and reel, 2500 units per reel

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 4 Megabit (4M) x 16
• Operating Voltage: 3.3V
• Access Time: 10 nanoseconds (ns)
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 10 years
• Package Dimensions: 48-pin Thin Small Outline Package (TSOP)

Detailed Pin Configuration

The IDT71V416YS10Y8 has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. OE#
19. CE#
20. WE#
21. I/O0
22. I/O1
23. I/O2
24. I/O3
25. I/O4
26. I/O5
27. I/O6
28. I/O7
29. I/O8
30. I/O9
31. I/O10
32. I/O11
33. I/O12
34. I/O13
35. I/O14
36. I/O15
37. VSS
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• High-speed access: The IDT71V416YS10Y8 offers fast data retrieval and storage capabilities, making it suitable for applications requiring quick access to memory.
• Low power consumption: This memory device is designed to operate efficiently with minimal power consumption, making it ideal for battery-powered devices or energy-efficient systems.
• Large storage capacity: With a capacity of 4 Megabits, the IDT71V416YS10Y8 provides ample space for storing data in various applications.

Advantages and Disadvantages

Advantages: - High-speed performance enables rapid data access. - Low power consumption prolongs battery life and reduces energy costs. - Large storage capacity accommodates extensive data requirements.

Disadvantages: - Limited compatibility with certain systems due to specific pin configuration and package type. - Relatively higher cost compared to other memory options with lower capacities.

Working Principles

The IDT71V416YS10Y8 operates based on the principles of static random access memory (SRAM). It stores data using flip-flop circuits, which retain information as long as power is supplied. When an address is provided, the corresponding data can be read or written to the memory cells. The device utilizes control signals such as OE# (Output Enable), CE# (Chip Enable), and WE# (Write Enable) to manage data access and manipulation.

Detailed Application Field Plans

The IDT71V416YS10Y8 is commonly used in various electronic systems that require high-speed and reliable memory storage. Some application fields include:

1. Computer Systems: Used as cache memory or for storing critical system data.
2. Networking Equipment: Utilized for buffering and temporary storage of network packets.
3. Telecommunications Devices: Employed in voice and data communication systems for fast data access.
4. Industrial Control Systems: Used for storing program code, configuration data, and real-time data in automation and control applications.
5. Consumer Electronics: Integrated into devices such as gaming consoles, set-top boxes, and digital cameras to provide high-speed memory capabilities.

Detailed and Complete Alternative Models

1. IDT71V416S10PHG - 4M x 16 SRAM, 10ns access time, 3.3V operating voltage, 48-pin TSOP package.
2. CY62157EV30LL-45ZSXI - 4M x 16 SRAM, 45ns access time, 3.0V operating voltage, 48-pin TSOP package.
3. AS6C4008-55BIN - 4M x 16 SRAM, 55ns access time, 5.0V operating voltage, 48-pin TSOP package.
4. MT45