IDT71V416YS12PH

Product Overview

Category: Integrated Circuit (IC)

Use: Memory device

Characteristics: - High-speed static random-access memory (SRAM) - Low power consumption - 4 Megabit (4M) capacity - 12ns access time - Single power supply of 3.3V

Package: Plastic SOJ (Small Outline J-lead)

Essence: The IDT71V416YS12PH is a high-performance SRAM designed for various applications that require fast and reliable data storage.

Packaging/Quantity: The IDT71V416YS12PH is available in a plastic SOJ package, with each unit containing one IC.

Specifications

• Capacity: 4 Megabit (4M)
• Access Time: 12ns
• Operating Voltage: 3.3V
• Organization: 512K x 8
• Data Retention: 10 years
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IDT71V416YS12PH has a total of 32 pins, which are assigned specific functions as follows:

1. A0-A18: Address Inputs
2. DQ0-DQ7: Data Inputs/Outputs
3. WE: Write Enable
4. OE: Output Enable
5. CE1, CE2: Chip Enables
6. VCC: Power Supply
7. GND: Ground

Functional Features

• High-speed operation: The IDT71V416YS12PH offers a fast access time of 12ns, allowing for quick retrieval and storage of data.
• Low power consumption: This SRAM is designed to minimize power usage, making it suitable for battery-powered devices or energy-efficient systems.
• Reliable data retention: With a data retention period of 10 years, the IDT71V416YS12PH ensures that stored information remains intact over an extended period.
• Easy integration: The IC can be easily integrated into various electronic systems due to its standard pin configuration and compatibility with common interface protocols.

Advantages and Disadvantages

Advantages: - High-speed operation enables fast data access - Low power consumption prolongs battery life - Reliable data retention ensures long-term data integrity - Easy integration into existing systems

Disadvantages: - Limited capacity (4 Megabit) compared to higher-capacity memory devices - Higher cost per bit compared to larger memory chips

Working Principles

The IDT71V416YS12PH operates based on static random-access memory technology. It stores data in a matrix of memory cells, each consisting of a flip-flop circuit. The stored data is retained as long as power is supplied to the device. Accessing data involves providing the appropriate address to select the desired memory location and enabling the read or write operation using control signals.

Detailed Application Field Plans

The IDT71V416YS12PH is commonly used in various applications, including but not limited to: 1. Embedded systems 2. Networking equipment 3. Communication devices 4. Industrial automation 5. Medical equipment 6. Automotive electronics

Detailed and Complete Alternative Models

1. IDT71V416L: Similar to IDT71V416YS12PH, but with a lower access time of 10ns.
2. IDT71V416S: Similar to IDT71V416YS12PH, but with a smaller package size (TSOP) for space-constrained designs.
3. IDT71V416Z: Similar to IDT71V416YS12PH, but with a wider operating temperature range (-55°C to +125°C) for extreme environments.

These alternative models offer different specifications and features to cater to specific application requirements.

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