IDT71V416YS12YI

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 44-pin TSOP (Thin Small Outline Package)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Organization: 4 Meg x 16
• Voltage Supply: 3.3V
• Access Time: 12 ns
• Operating Temperature Range: -40°C to +85°C
• Standby Current: 10 µA (typical)
• Package Dimensions: 0.400" x 0.875"

Detailed Pin Configuration

The IDT71V416YS12YI has a total of 44 pins. The pin configuration is as follows:

1. A0-A19: Address Inputs
2. DQ0-DQ15: Data Inputs/Outputs
3. WE#: Write Enable Input
4. OE#: Output Enable Input
5. CE#: Chip Enable Input
6. UB#, LB#: Byte Enable Inputs
7. VCC: Power Supply
8. GND: Ground

Functional Features

• High-speed operation: The IDT71V416YS12YI offers fast access times, allowing for quick data retrieval.
• Low power consumption: This SRAM device is designed to minimize power usage, making it suitable for battery-powered applications.
• Synchronous interface: The device operates synchronously with the system clock, ensuring efficient data transfer.
• Easy integration: The 44-pin TSOP package allows for easy integration into various electronic systems.

Advantages and Disadvantages

Advantages: - Fast access times enable rapid data processing. - Low power consumption prolongs battery life in portable devices. - Synchronous interface ensures efficient data transfer. - Easy integration due to the compact TSOP package.

Disadvantages: - Limited storage capacity compared to other memory technologies. - Relatively higher cost per bit compared to larger memory modules.

Working Principles

The IDT71V416YS12YI is a synchronous SRAM that stores and retrieves data using electronic circuits. It operates by receiving address inputs, which specify the location of the data to be accessed. The device then reads or writes data from/to the specified memory location based on control signals such as write enable (WE#), output enable (OE#), and chip enable (CE#). The synchronous interface ensures that data transfers occur in synchronization with the system clock, allowing for efficient communication between the SRAM and the rest of the system.

Detailed Application Field Plans

The IDT71V416YS12YI is commonly used in various applications, including:

1. Computer Systems: Used as cache memory to provide fast access to frequently accessed data.
2. Networking Equipment: Enables high-speed data buffering and packet processing in routers and switches.
3. Telecommunications: Used in base stations and network infrastructure equipment for storing real-time data.
4. Industrial Control Systems: Provides reliable data storage for control units in automation systems.
5. Consumer Electronics: Used in gaming consoles, set-top boxes, and digital cameras for data storage and processing.

Detailed and Complete Alternative Models

1. Cypress CY7C1041DV33: 4 Meg x 16 synchronous SRAM with 3.3V voltage supply and 10 ns access time.
2. Samsung K6R4016V1D-JC08: 4 Meg x 16 synchronous SRAM with 3.3V voltage supply and 8 ns access time.
3. Micron MT45W4MW16BFB-708 WT: 4 Meg x 16 synchronous SRAM with 3.3V voltage supply and 7 ns access time.

These alternative models offer similar functionality to the IDT71V416YS12YI and can be considered as replacements based on specific requirements.

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