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IDT71V424S10PHI8

IDT71V424S10PHI8

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
  • Package: 44-pin Plastic Thin Quad Flat Pack (TQFP)
  • Essence: Provides fast and reliable data storage and retrieval capabilities
  • Packaging/Quantity: Available in reels, with a quantity of 250 units per reel

Specifications

  • Memory Size: 4 Megabits (Mbit)
  • Organization: 512K words x 8 bits
  • Operating Voltage: 3.3 Volts (V)
  • Access Time: 10 nanoseconds (ns)
  • Operating Temperature Range: -40°C to +85°C
  • Data Retention: Greater than 20 years

Pin Configuration

The IDT71V424S10PHI8 has a total of 44 pins. The pin configuration is as follows:

  1. VCCQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. GND
  11. A0
  12. A1
  13. A2
  14. A3
  15. A4
  16. A5
  17. A6
  18. A7
  19. A8
  20. A9
  21. A10
  22. A11
  23. A12
  24. A13
  25. A14
  26. A15
  27. A16
  28. A17
  29. A18
  30. A19
  31. A20
  32. A21
  33. A22
  34. A23
  35. A24
  36. A25
  37. A26
  38. A27
  39. A28
  40. A29
  41. A30
  42. A31
  43. GND
  44. VCC

Functional Features

  • High-speed operation allows for quick data access and retrieval.
  • Low-power consumption makes it suitable for battery-powered devices.
  • Synchronous design ensures reliable and synchronized data transfers.
  • Static random-access memory technology provides non-volatile storage.

Advantages and Disadvantages

Advantages

  • Fast access time enables efficient data processing.
  • Low power consumption prolongs battery life in portable devices.
  • Reliable and durable memory storage.
  • Compact package size saves board space.

Disadvantages

  • Limited memory capacity compared to other storage technologies.
  • Higher cost per bit compared to alternative memory options.

Working Principles

The IDT71V424S10PHI8 operates based on the principles of synchronous static random-access memory (SRAM). It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The memory cells are organized into an array of 512K words, with each word consisting of 8 bits. The device uses an address bus to select specific memory locations and a data bus for reading from or writing to those locations. The synchronous design ensures that data transfers occur in synchronization with a clock signal, allowing for reliable and efficient operation.

Detailed Application Field Plans

The IDT71V424S10PHI8 is commonly used in various applications that require fast and reliable data storage and retrieval capabilities. Some potential application fields include:

  1. Telecommunications: Used in networking equipment, routers, and switches for buffering and caching purposes.
  2. Industrial Automation: Employed in programmable logic controllers (PLCs) and industrial control systems for storing critical data and program code.
  3. Automotive Electronics: Utilized in automotive control units, infotainment systems, and navigation devices for data storage and processing.
  4. Medical Devices: Integrated into medical equipment such as patient monitoring systems and diagnostic devices to store real-time data.

Detailed and Complete Alternative Models

  1. IDT71V424S15PHI8: Similar to the IDT71V424S10PHI8, but with a slightly higher access time of 15 ns.
  2. IDT71V424S20PHI8: Another variant with an access time of 20 ns, suitable for applications with less stringent timing requirements.
  3. IDT71V424S25PHI8: Offers a slower access time of 25 ns, but at a lower cost compared to the previous models.

These alternative models provide options for different performance requirements and budget considerations.

Word count: 511 words

기술 솔루션에 IDT71V424S10PHI8 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

Sure! Here are 10 common questions and answers related to the application of IDT71V424S10PHI8 in technical solutions:

  1. Question: What is IDT71V424S10PHI8?
    Answer: IDT71V424S10PHI8 is a specific model of synchronous static RAM (SRAM) manufactured by Integrated Device Technology (IDT).

  2. Question: What is the capacity of IDT71V424S10PHI8?
    Answer: The IDT71V424S10PHI8 has a capacity of 4 Megabits (Mbit), which is equivalent to 512 Kilobytes (KB).

  3. Question: What is the operating voltage range for IDT71V424S10PHI8?
    Answer: The operating voltage range for IDT71V424S10PHI8 is typically between 3.0V and 3.6V.

  4. Question: What is the access time of IDT71V424S10PHI8?
    Answer: The access time of IDT71V424S10PHI8 is 10 nanoseconds (ns), which refers to the time it takes to read or write data.

  5. Question: Can IDT71V424S10PHI8 be used in battery-powered devices?
    Answer: Yes, IDT71V424S10PHI8 can be used in battery-powered devices as it operates within a low voltage range.

  6. Question: Is IDT71V424S10PHI8 compatible with different microcontrollers?
    Answer: Yes, IDT71V424S10PHI8 is compatible with various microcontrollers that support SRAM interfacing.

  7. Question: Does IDT71V424S10PHI8 require any external components for operation?
    Answer: No, IDT71V424S10PHI8 does not require any external components for basic operation. However, additional support circuitry may be needed depending on the specific application.

  8. Question: Can IDT71V424S10PHI8 be used in high-speed data processing applications?
    Answer: Yes, IDT71V424S10PHI8 can be used in high-speed data processing applications due to its relatively fast access time.

  9. Question: What is the package type of IDT71V424S10PHI8?
    Answer: IDT71V424S10PHI8 is available in a 44-pin Plastic Leaded Chip Carrier (PLCC) package.

  10. Question: Are there any recommended operating conditions or precautions for using IDT71V424S10PHI8?
    Answer: Yes, it is important to follow the manufacturer's datasheet and guidelines for proper power supply, signal timing, and temperature conditions to ensure reliable operation of IDT71V424S10PHI8.