IDT71V67602S133BQG8

Product Overview

Category

The IDT71V67602S133BQG8 belongs to the category of integrated circuits (ICs).

Use

This product is commonly used in electronic devices for memory storage and retrieval purposes.

Characteristics

• High-speed performance
• Large storage capacity
• Low power consumption
• Reliable data retention
• Easy integration into various electronic systems

Package

The IDT71V67602S133BQG8 is available in a compact and durable package, designed to protect the integrated circuit from external factors such as moisture, dust, and physical damage.

Essence

The essence of this product lies in its ability to provide efficient and reliable memory storage and retrieval capabilities for electronic devices.

Packaging/Quantity

The IDT71V67602S133BQG8 is typically packaged individually or in reels, depending on the manufacturer's specifications. The quantity per package may vary, but it is commonly available in quantities suitable for both small-scale and large-scale production.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 4M words x 16 bits
• Operating Voltage: 3.3V
• Access Time: 133 nanoseconds
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C
• Package Type: 100-pin Thin Quad Flat Pack (TQFP)

Detailed Pin Configuration

The IDT71V67602S133BQG8 has a total of 100 pins, each serving a specific function within the integrated circuit. The detailed pin configuration is as follows:

(Pin Number) - (Pin Name) - (Function) 1 - A0-A18 - Address Inputs 2 - DQ0-DQ15 - Data Inputs/Outputs 3 - WE - Write Enable 4 - OE - Output Enable 5 - CE1, CE2 - Chip Enables 6 - UB/LB - Upper Byte/Lower Byte Control 7 - VCC - Power Supply 8 - GND - Ground

(Note: The above pin configuration is a simplified representation. Please refer to the product datasheet for a complete and accurate pin configuration diagram.)

Functional Features

• High-speed data access and retrieval
• Non-volatile storage capability
• Low power consumption during standby mode
• Easy integration with various microcontrollers and processors
• Reliable data retention even in harsh environmental conditions

Advantages and Disadvantages

Advantages

• Fast access time allows for efficient data processing.
• Large storage capacity accommodates complex applications.
• Low power consumption prolongs battery life in portable devices.
• Compatibility with different electronic systems enhances versatility.

Disadvantages

• Relatively higher cost compared to other memory technologies.
• Limited scalability beyond the specified storage capacity.
• Vulnerable to electromagnetic interference (EMI) due to its parallel interface.

Working Principles

The IDT71V67602S133BQG8 operates based on the principles of static random access memory (SRAM). It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The integrated circuit uses a combination of transistors and capacitors to store and retrieve data quickly and efficiently.

Detailed Application Field Plans

The IDT71V67602S133BQG8 finds application in various electronic devices and systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics - Consumer electronics

Detailed and Complete Alternative Models

• IDT71V67602S133BQG
• IDT71V67602S133BQGI
• IDT71V67602S133BQG8I
• IDT71V67602S133BQG8J

(Note: The above list is not exhaustive. Please refer to the manufacturer's documentation for a complete list of alternative models.)

In conclusion, the IDT71V67602S133BQG8 is a high-performance integrated circuit belonging to the category of static random access memory (SRAM). It offers fast data access, large storage capacity, and low power consumption, making it suitable for various electronic applications. However, it has certain limitations such as higher cost and susceptibility to electromagnetic interference. Nonetheless, its reliability, versatility, and ease of integration make it a popular choice in the field of memory storage and retrieval.