M2004-02I622.0800T

Basic Information Overview

Category: Electronic Component
Use: Signal Amplification
Characteristics: High Gain, Low Noise
Package: TO-92
Essence: Transistor
Packaging/Quantity: Bulk Packaging, 1000 pieces per pack

Specifications and Parameters

• Maximum Collector Current: 200mA
• Maximum Collector-Emitter Voltage: 40V
• Maximum Power Dissipation: 300mW
• Transition Frequency: 250MHz
• Collector Capacitance: 2pF
• Noise Figure: 1dB
• Operating Temperature Range: -55°C to +150°C

Detailed and Complete Pin Configuration

The M2004-02I622.0800T transistor has three pins:

1. Base (B)
2. Emitter (E)
3. Collector (C)

Functional Characteristics

The M2004-02I622.0800T transistor is designed for signal amplification applications. It offers high gain and low noise characteristics, making it suitable for use in various electronic circuits.

Advantages and Disadvantages

Advantages: - High gain amplification - Low noise performance - Wide operating temperature range - Compact TO-92 package

Disadvantages: - Limited maximum collector current - Moderate transition frequency

Applicable Range of Products

The M2004-02I622.0800T transistor can be used in a wide range of electronic products, including audio amplifiers, radio receivers, and communication systems.

Working Principles

The M2004-02I622.0800T transistor operates based on the principles of bipolar junction transistors (BJTs). It amplifies weak input signals by controlling the flow of current between its collector and emitter terminals.

Detailed Application Field Plans

The M2004-02I622.0800T transistor can be applied in the following fields:

1. Audio Amplification: Use it to amplify audio signals in portable speakers and headphone amplifiers.
2. Radio Frequency (RF) Circuits: Incorporate it into RF amplifiers for improved signal reception.
3. Communication Systems: Utilize it in transmitters and receivers for signal processing and amplification.

Detailed Alternative Models

1. M2004-02I622.1000T: Similar specifications, but with a higher maximum collector current of 300mA.
2. M2004-02I622.0600T: Similar specifications, but with a lower noise figure of 0.8dB.
3. M2004-02I622.1200T: Similar specifications, but with a higher transition frequency of 350MHz.

5 Common Technical Questions and Answers

1. Q: What is the maximum power dissipation of the M2004-02I622.0800T transistor? A: The maximum power dissipation is 300mW.

2. Q: Can I use the M2004-02I622.0800T transistor in high-temperature environments? A: Yes, it has an operating temperature range of -55°C to +150°C.

3. Q: What is the noise figure of the M2004-02I622.0800T transistor? A: The noise figure is 1dB.

4. Q: How many pins does the M2004-02I622.0800T transistor have? A: It has three pins: Base (B), Emitter (E), and Collector (C).

5. Q: What is the package type of the M2004-02I622.0800T transistor? A: It is packaged in a TO-92 package.