Infineon Technologies
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BSC010N04LSIATMA1
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BSC010N04LSIATMA1

Product Category: Power MOSFET

Basic Information Overview: - Category: Semiconductor - Use: Power switching applications - Characteristics: Low on-resistance, high current capability, low gate charge - Package: TO-263-7 (D2PAK) - Essence: Efficient power management - Packaging/Quantity: Tape and Reel, 800 units per reel

Specifications: - Voltage - Rated: 40V - On-Resistance: 1.0 mOhm - Current Rating: 100A - Power Dissipation: 250W - Operating Temperature: -55°C ~ 175°C

Detailed Pin Configuration: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source - Pin 4: N/C - Pin 5: N/C - Pin 6: Source - Pin 7: Drain

Functional Features: - Low on-resistance for minimal power loss - High current capability for robust performance - Fast switching speed for efficiency

Advantages and Disadvantages: - Advantages: - High efficiency - Robust performance - Fast switching speed - Disadvantages: - Sensitive to static electricity - Higher cost compared to traditional MOSFETs

Working Principles: The BSC010N04LSIATMA1 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans: This MOSFET is suitable for a wide range of power switching applications, including motor control, power supplies, and inverters. Its low on-resistance and high current capability make it ideal for high-power systems.

Detailed and Complete Alternative Models: - BSC014N04LSIATMA1 - BSC008N04LSIATMA1 - BSC012N04LSIATMA1

This completes the entry for BSC010N04LSIATMA1 in the English editing encyclopedia format.

기술 솔루션에 BSC010N04LSIATMA1 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is the maximum drain-source voltage of BSC010N04LSIATMA1?

    • The maximum drain-source voltage of BSC010N04LSIATMA1 is 40V.

  2. What is the continuous drain current rating of BSC010N04LSIATMA1?

    • The continuous drain current rating of BSC010N04LSIATMA1 is 100A.

  3. What is the on-resistance of BSC010N04LSIATMA1?

    • The on-resistance of BSC010N04LSIATMA1 is typically 1.0mΩ.

  4. What is the gate threshold voltage of BSC010N04LSIATMA1?

    • The gate threshold voltage of BSC010N04LSIATMA1 is typically 2.5V.

  5. What is the power dissipation of BSC010N04LSIATMA1?

    • The power dissipation of BSC010N04LSIATMA1 is 200W.

  6. What is the operating temperature range of BSC010N04LSIATMA1?

    • The operating temperature range of BSC010N04LSIATMA1 is -55°C to 175°C.

  7. Is BSC010N04LSIATMA1 suitable for automotive applications?

    • Yes, BSC010N04LSIATMA1 is designed for automotive applications.

  8. Does BSC010N04LSIATMA1 have built-in protection features?

    • Yes, BSC010N04LSIATMA1 has built-in overcurrent and thermal protection.

  9. Can BSC010N04LSIATMA1 be used in high-frequency switching applications?

    • Yes, BSC010N04LSIATMA1 is suitable for high-frequency switching due to its low on-resistance.

  10. What are some typical technical solutions where BSC010N04LSIATMA1 can be applied?

    • BSC010N04LSIATMA1 can be used in electric vehicle powertrains, motor control systems, battery management, and other high-current applications.