BSZ110N08NS5ATMA1
Product Category: Semiconductor Device
Basic Information Overview: - Category: Power MOSFET - Use: This product is used for power management applications in various electronic devices and systems. - Characteristics: High voltage capability, low on-resistance, high switching speed, and low gate charge. - Package: TO-220AB - Essence: Efficient power handling and control - Packaging/Quantity: Typically packaged in reels or tubes containing a specific quantity per package.
Specifications: - Drain-Source Voltage (Vdss): 80V - Continuous Drain Current (Id): 110A - On-Resistance (Rds(on)max): 4.5mΩ - Gate-Source Voltage (Vgs): ±20V - Total Gate Charge (Qg): 60nC - Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source
Functional Features: - High efficiency power management - Fast switching speed - Low power dissipation - Enhanced thermal performance
Advantages and Disadvantages: - Advantages: - High voltage capability - Low on-resistance - Fast switching speed - Suitable for high-power applications - Disadvantages: - Sensitive to static electricity - Requires careful handling during installation
Working Principles: The BSZ110N08NS5ATMA1 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the device.
Detailed Application Field Plans: This power MOSFET is suitable for a wide range of applications including but not limited to: - Switching power supplies - Motor control - DC-DC converters - Inverters
Detailed and Complete Alternative Models: - BSZ120N08NS5ATMA1 - BSZ100N08NS5ATMA1 - BSZ115N08NS5ATMA1
Word Count: 314 words
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