IPB017N06N3GATMA1
Product Overview
Category
The IPB017N06N3GATMA1 belongs to the category of power MOSFETs.
Use
It is commonly used in applications requiring high power switching and efficient energy management.
Characteristics
- High power handling capability
- Low on-state resistance
- Fast switching speed
- Efficient thermal performance
Package
The IPB017N06N3GATMA1 is typically available in a TO-263 package.
Essence
This MOSFET is essential for controlling high-power circuits with minimal power loss.
Packaging/Quantity
It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): [specification]
- Continuous Drain Current (ID): [specification]
- On-State Resistance (RDS(on)): [specification]
- Gate-Source Voltage (VGS): [specification]
- Operating Temperature Range: [specification]
Detailed Pin Configuration
The pin configuration of the IPB017N06N3GATMA1 typically includes the following: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain
Functional Features
- High current handling capacity
- Low conduction losses
- Fast switching characteristics
- Robust thermal performance
Advantages
- Efficient power management
- Reduced heat dissipation
- Enhanced system reliability
- Improved overall circuit efficiency
Disadvantages
- Sensitivity to static electricity
- Gate drive complexity in some applications
- Potential for voltage overshoot during switching transitions
Working Principles
The IPB017N06N3GATMA1 operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. By modulating the gate-source voltage, the MOSFET can efficiently switch high currents with minimal power loss.
Detailed Application Field Plans
The IPB017N06N3GATMA1 finds extensive use in various applications, including: - Switched-mode power supplies - Motor control systems - Inverters and converters - Automotive electronics - Industrial automation
Detailed and Complete Alternative Models
Some alternative models to the IPB017N06N3GATMA1 include: - [Alternative Model 1] - [Alternative Model 2] - [Alternative Model 3] - [Alternative Model 4]
In conclusion, the IPB017N06N3GATMA1 power MOSFET offers high-performance characteristics suitable for diverse high-power applications, despite its limitations. Its efficient power handling, fast switching speed, and robust thermal performance make it a valuable component in modern electronic systems.
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기술 솔루션에 IPB017N06N3GATMA1 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.
What is the maximum drain-source voltage of IPB017N06N3GATMA1?
- The maximum drain-source voltage of IPB017N06N3GATMA1 is 60V.
What is the continuous drain current rating of IPB017N06N3GATMA1?
- The continuous drain current rating of IPB017N06N3GATMA1 is 100A.
What is the on-state resistance (RDS(on)) of IPB017N06N3GATMA1?
- The on-state resistance (RDS(on)) of IPB017N06N3GATMA1 is typically 1.7mΩ at VGS = 10V.
What is the gate threshold voltage of IPB017N06N3GATMA1?
- The gate threshold voltage of IPB017N06N3GATMA1 is typically 2V.
Can IPB017N06N3GATMA1 be used in automotive applications?
- Yes, IPB017N06N3GATMA1 is suitable for automotive applications.
What is the operating temperature range of IPB017N06N3GATMA1?
- The operating temperature range of IPB017N06N3GATMA1 is -55°C to 175°C.
Does IPB017N06N3GATMA1 have built-in ESD protection?
- Yes, IPB017N06N3GATMA1 features built-in ESD protection.
What is the package type of IPB017N06N3GATMA1?
- IPB017N06N3GATMA1 comes in a TO-263-7 package.
Is IPB017N06N3GATMA1 RoHS compliant?
- Yes, IPB017N06N3GATMA1 is RoHS compliant.
What are some typical applications for IPB017N06N3GATMA1?
- Typical applications for IPB017N06N3GATMA1 include motor control, power supplies, and DC-DC converters.