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IPB036N12N3GATMA1

IPB036N12N3GATMA1

Product Overview

Category

The IPB036N12N3GATMA1 belongs to the category of power MOSFETs.

Use

It is used for high-power switching applications in various electronic circuits and systems.

Characteristics

  • High voltage and current handling capabilities
  • Low on-state resistance
  • Fast switching speed
  • Low gate charge
  • Enhanced thermal performance

Package

The IPB036N12N3GATMA1 is typically available in a TO-263 package.

Essence

This MOSFET is essential for efficient power management and control in electronic devices and systems.

Packaging/Quantity

It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Voltage Rating: 120V
  • Current Rating: 80A
  • On-State Resistance: 3.6mΩ
  • Gate-Source Voltage (Max): ±20V
  • Total Gate Charge: 60nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPB036N12N3GATMA1 typically has three pins: 1. Source (S) 2. Drain (D) 3. Gate (G)

Functional Features

  • High power handling capacity
  • Low conduction losses
  • Fast switching characteristics
  • Enhanced thermal performance
  • Robustness against overcurrent and overvoltage conditions

Advantages

  • Efficient power management
  • Reduced heat dissipation
  • Improved system reliability
  • Suitable for high-frequency switching applications

Disadvantages

  • Higher cost compared to standard MOSFETs
  • Sensitive to electrostatic discharge (ESD)

Working Principles

The IPB036N12N3GATMA1 operates based on the principles of field-effect transistors, utilizing its gate voltage to control the flow of current between the source and drain terminals.

Detailed Application Field Plans

This MOSFET is widely used in: - Switch-mode power supplies - Motor control systems - Inverters and converters - Automotive electronics - Industrial automation

Detailed and Complete Alternative Models

Some alternative models to the IPB036N12N3GATMA1 include: - IRFB7440PbF - FDPF33N25T - STP80NF55-06

In conclusion, the IPB036N12N3GATMA1 is a high-performance power MOSFET with excellent characteristics suitable for a wide range of high-power switching applications in various industries.

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기술 솔루션에 IPB036N12N3GATMA1 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. Question: What is the maximum drain-source voltage for IPB036N12N3GATMA1?
    Answer: The maximum drain-source voltage for IPB036N12N3GATMA1 is 120V.

  2. Question: What is the continuous drain current rating of IPB036N12N3GATMA1?
    Answer: The continuous drain current rating of IPB036N12N3GATMA1 is 100A.

  3. Question: Can IPB036N12N3GATMA1 be used in automotive applications?
    Answer: Yes, IPB036N12N3GATMA1 is suitable for automotive applications.

  4. Question: What is the typical on-resistance of IPB036N12N3GATMA1?
    Answer: The typical on-resistance of IPB036N12N3GATMA1 is 3.6mΩ.

  5. Question: Is IPB036N12N3GATMA1 RoHS compliant?
    Answer: Yes, IPB036N12N3GATMA1 is RoHS compliant.

  6. Question: What is the operating temperature range for IPB036N12N3GATMA1?
    Answer: The operating temperature range for IPB036N12N3GATMA1 is -55°C to 175°C.

  7. Question: Does IPB036N12N3GATMA1 have a low gate charge?
    Answer: Yes, IPB036N12N3GATMA1 has a low gate charge.

  8. Question: Can IPB036N12N3GATMA1 be used in power supply applications?
    Answer: Yes, IPB036N12N3GATMA1 is suitable for power supply applications.

  9. Question: What package type does IPB036N12N3GATMA1 come in?
    Answer: IPB036N12N3GATMA1 comes in a TO-263-7 package.

  10. Question: Is IPB036N12N3GATMA1 suitable for high-frequency switching applications?
    Answer: Yes, IPB036N12N3GATMA1 is suitable for high-frequency switching applications.