IPB038N12N3GATMA1

1. Introduction

The IPB038N12N3GATMA1 is a power MOSFET belonging to the category of semiconductor devices. It is commonly used in various electronic applications due to its specific characteristics and performance.

2. Basic Information Overview

• Category: Power MOSFET
• Use: Switching and amplification in electronic circuits
• Characteristics: High voltage capability, low on-resistance, fast switching speed
• Package: TO-263-3 (D2PAK)
• Essence: Efficient power management
• Packaging/Quantity: Typically packaged in reels of 800 units

3. Specifications

• Voltage Rating: 120V
• Current Rating: 80A
• On-Resistance: 3.8mΩ
• Gate Charge: 38nC
• Operating Temperature: -55°C to 175°C
• Mounting Type: Surface Mount

4. Detailed Pin Configuration

The IPB038N12N3GATMA1 has a standard pin configuration with three pins: Gate (G), Drain (D), and Source (S).

5. Functional Features

• High Voltage Capability: Suitable for high-power applications
• Low On-Resistance: Minimizes power loss and heat generation
• Fast Switching Speed: Enables efficient circuit operation

6. Advantages and Disadvantages

Advantages

• High voltage rating
• Low on-resistance
• Fast switching speed

Disadvantages

• Sensitive to static electricity
• Requires careful handling during assembly

7. Working Principles

The IPB038N12N3GATMA1 operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. When a sufficient gate voltage is applied, the MOSFET allows current to pass through, acting as a switch or amplifier in electronic circuits.

8. Detailed Application Field Plans

The IPB038N12N3GATMA1 finds extensive use in various applications, including: - Switched-mode power supplies - Motor control systems - Inverters and converters - Audio amplifiers - LED lighting systems

9. Detailed and Complete Alternative Models

Some alternative models to the IPB038N12N3GATMA1 include: - IRF1405PbF - FDP8870 - STP80NF55-06

In conclusion, the IPB038N12N3GATMA1 is a versatile power MOSFET with high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of electronic applications.

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