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IPB120N04S3-02
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IPB120N04S3-02

Product Overview

The IPB120N04S3-02 belongs to the category of power MOSFETs and is widely used in various electronic applications. This semiconductor device is known for its high efficiency, low on-resistance, and robust packaging, making it suitable for power management in a range of electronic systems.

Basic Information

  • Category: Power MOSFET
  • Use: Power management in electronic systems
  • Characteristics: High efficiency, low on-resistance
  • Package: TO263-3
  • Essence: Efficient power control
  • Packaging/Quantity: Standard packaging, quantity varies by supplier

Specifications

The IPB120N04S3-02 features a maximum drain-source voltage of 40V and a continuous drain current of 120A. It has a low on-resistance of 4mΩ and a gate threshold voltage of 2V, making it suitable for high-power applications.

Detailed Pin Configuration

The IPB120N04S3-02 follows the standard pin configuration for a TO263-3 package, with the gate, drain, and source pins clearly labeled for easy integration into circuit designs.

Functional Features

  • High efficiency power management
  • Low on-resistance for minimal power loss
  • Robust packaging for reliable performance in various environments

Advantages and Disadvantages

Advantages: - High efficiency - Low on-resistance - Robust packaging - Suitable for high-power applications

Disadvantages: - May require heat sinking in high-power applications - Sensitive to static discharge if mishandled

Working Principles

The IPB120N04S3-02 operates based on the principles of field-effect transistors, utilizing its low on-resistance to efficiently control the flow of power within electronic systems. By modulating the gate voltage, it can effectively manage the power flow with minimal losses.

Detailed Application Field Plans

The IPB120N04S3-02 finds extensive use in applications such as: - Switching power supplies - Motor control - Battery management systems - Solar inverters - LED lighting systems

Detailed and Complete Alternative Models

  • IRF3205
  • FDP8870
  • STP80NF55-06

In conclusion, the IPB120N04S3-02 power MOSFET offers high efficiency and robust performance, making it an ideal choice for power management in various electronic systems.

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기술 솔루션에 IPB120N04S3-02 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is the maximum drain-source voltage of IPB120N04S3-02?

    • The maximum drain-source voltage of IPB120N04S3-02 is 40V.

  2. What is the continuous drain current rating of IPB120N04S3-02?

    • The continuous drain current rating of IPB120N04S3-02 is 120A.

  3. What is the on-resistance of IPB120N04S3-02 at a specific gate-source voltage?

    • The on-resistance of IPB120N04S3-02 varies with gate-source voltage, typically around 1.8mΩ at 10V.

  4. Can IPB120N04S3-02 be used in automotive applications?

    • Yes, IPB120N04S3-02 is suitable for automotive applications due to its high current handling capability and low on-resistance.

  5. What is the typical gate charge of IPB120N04S3-02?

    • The typical gate charge of IPB120N04S3-02 is around 100nC.

  6. Is IPB120N04S3-02 suitable for use in power supplies?

    • Yes, IPB120N04S3-02 can be used in power supply applications due to its high current rating and low on-resistance.

  7. What is the operating temperature range of IPB120N04S3-02?

    • The operating temperature range of IPB120N04S3-02 is typically -55°C to 175°C.

  8. Does IPB120N04S3-02 require a heat sink for high-power applications?

    • Yes, for high-power applications, it is recommended to use a heat sink to ensure proper thermal management.

  9. Can IPB120N04S3-02 be used in motor control applications?

    • Yes, IPB120N04S3-02 is suitable for motor control applications due to its high current handling capability.

  10. What are some common protection measures when using IPB120N04S3-02 in circuit designs?

    • Common protection measures include overcurrent protection, overvoltage protection, and thermal management to ensure safe operation of the device.