IPB50R299CPATMA1

Product Overview

• Category: Power MOSFET
• Use: Power switching applications
• Characteristics: High efficiency, low on-resistance, fast switching speed
• Package: TO-263-7 package
• Essence: Advanced power management solution
• Packaging/Quantity: Tape and reel, 800 units per reel

Specifications

• Voltage Rating: 500V
• Current Rating: 23A
• RDS(ON): 0.299 Ohm
• Gate Charge: 38nC
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The IPB50R299CPATMA1 features a TO-263-7 package with the following pin configuration: 1. Gate 2. Drain 3. Source 4. N/C 5. Source 6. Drain 7. Gate

Functional Features

• Low on-resistance for high efficiency
• Fast switching speed for improved performance
• Enhanced power management capabilities

Advantages and Disadvantages

• Advantages:
  • High efficiency
  • Fast switching speed
  • Advanced power management
• Disadvantages:
  • Higher cost compared to standard MOSFETs
  • Sensitive to voltage spikes

Working Principles

The IPB50R299CPATMA1 operates based on the principles of field-effect transistors, utilizing its low on-resistance and fast switching speed to efficiently manage power in various applications.

Detailed Application Field Plans

This MOSFET is suitable for a wide range of applications including: - Switched-mode power supplies - Motor control - Inverters - LED lighting - Solar inverters

Detailed and Complete Alternative Models

• Alternative Model 1: IPB60R190CPATMA1
• Alternative Model 2: IPB40R099CPATMA1
• Alternative Model 3: IPB30R140CPATMA1

Note: The alternative models listed above offer similar performance characteristics and are compatible alternatives to the IPB50R299CPATMA1.

This comprehensive entry provides an in-depth understanding of the IPB50R299CPATMA1, covering its specifications, features, application fields, and alternative models, making it a valuable resource for engineers and professionals in the electronics industry.