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IPD135N08N3GATMA1
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IPD135N08N3GATMA1

Product Overview

Category

The IPD135N08N3GATMA1 belongs to the category of power MOSFETs.

Use

It is used for high-power switching applications in various electronic devices and systems.

Characteristics

  • High power handling capability
  • Low on-state resistance
  • Fast switching speed
  • Low gate charge
  • Enhanced thermal performance

Package

The IPD135N08N3GATMA1 is typically available in a TO-252 package.

Essence

This MOSFET is essential for efficient power management and control in electronic circuits.

Packaging/Quantity

It is commonly packaged in reels with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 80V
  • Continuous Drain Current (ID): 135A
  • RDS(ON) (Max) @ VGS = 10V: 1.8mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 150nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPD135N08N3GATMA1 has a standard pin configuration with three pins: gate, drain, and source.

Functional Features

  • Low conduction losses
  • High efficiency
  • Suitable for high-frequency applications
  • Enhanced ruggedness and reliability

Advantages and Disadvantages

Advantages

  • High power handling capacity
  • Low on-state resistance leading to reduced power dissipation
  • Fast switching speed enabling efficient power control

Disadvantages

  • Higher gate capacitance may require careful driver design for optimal performance
  • Sensitivity to static electricity and overvoltage conditions

Working Principles

The IPD135N08N3GATMA1 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate-source voltage, the MOSFET can efficiently switch high currents in electronic circuits.

Detailed Application Field Plans

The IPD135N08N3GATMA1 finds extensive use in various applications including: - Switch-mode power supplies - Motor control systems - Automotive electronics - Industrial automation - Renewable energy systems

Detailed and Complete Alternative Models

Some alternative models to the IPD135N08N3GATMA1 include: - IRF1405PbF - FDP8870 - AUIRFN8409

In conclusion, the IPD135N08N3GATMA1 power MOSFET offers high-performance characteristics suitable for demanding power management applications across diverse industries.

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기술 솔루션에 IPD135N08N3GATMA1 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is the maximum drain-source voltage of IPD135N08N3GATMA1?

    • The maximum drain-source voltage of IPD135N08N3GATMA1 is 80V.

  2. What is the continuous drain current rating of IPD135N08N3GATMA1?

    • The continuous drain current rating of IPD135N08N3GATMA1 is 135A.

  3. What is the on-resistance of IPD135N08N3GATMA1?

    • The on-resistance of IPD135N08N3GATMA1 is typically 4.5mΩ at Vgs=10V.

  4. What is the gate threshold voltage of IPD135N08N3GATMA1?

    • The gate threshold voltage of IPD135N08N3GATMA1 is typically 2.5V.

  5. What is the power dissipation of IPD135N08N3GATMA1?

    • The power dissipation of IPD135N08N3GATMA1 is 625W.

  6. What are the typical applications for IPD135N08N3GATMA1?

    • IPD135N08N3GATMA1 is commonly used in high-current, high-frequency switching applications such as motor control, power supplies, and inverters.

  7. What is the operating temperature range of IPD135N08N3GATMA1?

    • The operating temperature range of IPD135N08N3GATMA1 is -55°C to 175°C.

  8. Does IPD135N08N3GATMA1 have built-in protection features?

    • Yes, IPD135N08N3GATMA1 has built-in overcurrent protection and thermal shutdown features.

  9. What is the package type of IPD135N08N3GATMA1?

    • IPD135N08N3GATMA1 comes in a TO-252-3 package.

  10. Is IPD135N08N3GATMA1 RoHS compliant?

    • Yes, IPD135N08N3GATMA1 is RoHS compliant, making it suitable for environmentally friendly designs.