IPD50N04S308ATMA1

Product Overview

• Category: Power MOSFET
• Use: Switching and amplification in power electronics applications
• Characteristics: High voltage, high current capability, low on-resistance
• Package: TO-252-3 (DPAK)
• Essence: Power management and control
• Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

• Voltage Rating: 40V
• Current Rating: 50A
• On-Resistance: 8.5mΩ
• Gate Charge: 30nC
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPD50N04S308ATMA1 has a standard TO-252-3 pin configuration: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

• Low on-resistance for efficient power management
• Fast switching speed for improved performance
• High current handling capability for robust applications

Advantages and Disadvantages

Advantages: - High current rating - Low on-resistance - Wide operating temperature range

Disadvantages: - Relatively high gate charge - Limited voltage rating

Working Principles

The IPD50N04S308ATMA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device.

Detailed Application Field Plans

This MOSFET is suitable for a wide range of power electronics applications, including: - Motor control - Power supplies - DC-DC converters - Inverters

Detailed and Complete Alternative Models

• IRF540N
• FDP8870
• STP55NF06L

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This content provides a comprehensive overview of the IPD50N04S308ATMA1, covering its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.