IRF1018ESTRLPBF
Product Category: Power MOSFET
Basic Information Overview: - Category: Electronic Component - Use: Power switching applications - Characteristics: High power handling, low on-resistance, fast switching speed - Package: D2PAK - Essence: Efficient power management - Packaging/Quantity: Tape & Reel, 800 units per reel
Specifications: - Drain-Source Voltage (Vdss): 60V - Continuous Drain Current (Id): 66A - RDS(ON) (Max) @ VGS = 10V: 1.8mΩ - Gate-Source Voltage (Vgs): ±20V - Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration: - Pin 1 (G): Gate - Pin 2 (D): Drain - Pin 3 (S): Source
Functional Features: - Low on-resistance for minimal power loss - Fast switching speed for improved efficiency - High power handling capability for robust performance
Advantages and Disadvantages: - Advantages: - High power handling - Low on-resistance - Fast switching speed - Disadvantages: - Sensitive to static electricity - Requires careful handling during installation
Working Principles: The IRF1018ESTRLPBF operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When a sufficient voltage is applied to the gate, the MOSFET allows a high current to flow through it with minimal resistance.
Detailed Application Field Plans: This MOSFET is commonly used in various power switching applications such as motor control, power supplies, and DC-DC converters. Its high power handling and fast switching speed make it suitable for applications requiring efficient power management and control.
Detailed and Complete Alternative Models: - IRF1018E: Similar specifications and characteristics - IRF1018EPBF: Alternate packaging option with similar performance
This completes the entry for IRF1018ESTRLPBF in the English editing encyclopedia format.
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