IRF6618TRPBF

Product Category: Power MOSFET

Basic Information Overview: - Category: Power semiconductor - Use: Switching and amplifying electronic signals in power applications - Characteristics: High voltage, high current capability, low on-resistance - Package: D2PAK (TO-263) - Essence: Efficient power management and control - Packaging/Quantity: Tape & Reel, 800 units per reel

Specifications: - Voltage Rating: 30V - Continuous Drain Current: 140A - RDS(ON): 1.5mΩ - Gate Threshold Voltage: 2V - 4V - Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source

Functional Features: - Low on-resistance for minimal power loss - Fast switching speed for efficient operation - High current handling capability - Enhanced thermal performance

Advantages: - High efficiency in power management - Suitable for high-power applications - Robust and reliable performance - Compact package design

Disadvantages: - Sensitive to static electricity - Requires careful handling during assembly

Working Principles: The IRF6618TRPBF operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device. When a voltage is applied to the gate terminal, it creates an electric field that controls the flow of current between the drain and source terminals.

Detailed Application Field Plans: - Power supplies - Motor control - DC-DC converters - Inverters - Battery management systems

Detailed and Complete Alternative Models: - IRF6617TRPBF - IRF6616TRPBF - IRF6615TRPBF - IRF6614TRPBF

This comprehensive entry provides an in-depth understanding of the IRF6618TRPBF Power MOSFET, covering its category, basic information overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.