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IRFB3507PBF
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IRFB3507PBF

Product Overview

  • Category: Power MOSFET
  • Use: Switching applications in power supplies, motor control, and other high current applications
  • Characteristics: High voltage, high current capability, low on-resistance, fast switching speed
  • Package: TO-220AB
  • Essence: Power MOSFET for high-power switching applications
  • Packaging/Quantity: Available in tape and reel packaging, quantity varies by supplier

Specifications

  • Voltage Rating: 75V
  • Continuous Drain Current: 120A
  • RDS(ON): 8.5mΩ
  • Gate-Source Voltage (Max): ±20V
  • Total Gate Charge (Qg): 110nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IRFB3507PBF MOSFET has a standard TO-220AB pin configuration with three pins: gate (G), drain (D), and source (S).

Functional Features

  • Low on-resistance for minimal power dissipation
  • Fast switching speed for efficient operation
  • High current handling capability for demanding applications

Advantages and Disadvantages

Advantages

  • High voltage and current capability
  • Low on-resistance for reduced power loss
  • Fast switching speed for improved efficiency

Disadvantages

  • Higher cost compared to lower power MOSFETs
  • Requires careful consideration of heat dissipation in high-power applications

Working Principles

The IRFB3507PBF operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the device. When a suitable voltage is applied to the gate terminal, the MOSFET allows or blocks the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IRFB3507PBF is well-suited for various high-power switching applications, including: - Power supplies - Motor control systems - Inverters - DC-DC converters - Solar inverters

Detailed and Complete Alternative Models

  • IRFB4110PBF: Similar voltage and current ratings with lower on-resistance
  • IRFB7434PBF: Higher voltage rating with comparable current handling capability
  • IRFB5620PBF: Lower voltage rating with similar on-resistance and current capacity

This comprehensive range of alternative models provides flexibility in selecting the most suitable MOSFET for specific application requirements.

This entry provides a detailed overview of the IRFB3507PBF Power MOSFET, covering its specifications, features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.

기술 솔루션에 IRFB3507PBF 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is the maximum drain-source voltage of IRFB3507PBF?

    • The maximum drain-source voltage of IRFB3507PBF is 75 volts.

  2. What is the continuous drain current rating of IRFB3507PBF?

    • The continuous drain current rating of IRFB3507PBF is 120 amperes.

  3. What is the on-state resistance (RDS(on)) of IRFB3507PBF?

    • The on-state resistance (RDS(on)) of IRFB3507PBF is typically 8.5 milliohms at VGS = 10V.

  4. What is the gate threshold voltage of IRFB3507PBF?

    • The gate threshold voltage of IRFB3507PBF is typically 2 to 4 volts.

  5. What is the power dissipation of IRFB3507PBF?

    • The power dissipation of IRFB3507PBF is 280 watts.

  6. What are the recommended operating temperature range for IRFB3507PBF?

    • The recommended operating temperature range for IRFB3507PBF is -55°C to 175°C.

  7. Is IRFB3507PBF suitable for high-frequency switching applications?

    • Yes, IRFB3507PBF is suitable for high-frequency switching applications due to its low RDS(on) and fast switching characteristics.

  8. Does IRFB3507PBF have built-in protection features?

    • IRFB3507PBF does not have built-in protection features and external circuitry may be required for overcurrent or overvoltage protection.

  9. What are some common applications for IRFB3507PBF?

    • Common applications for IRFB3507PBF include motor control, power supplies, DC-DC converters, and inverters.

  10. What are the key differences between IRFB3507PBF and similar MOSFETs in its class?

    • The key differences between IRFB3507PBF and similar MOSFETs may include parameters such as RDS(on), gate charge, and maximum drain-source voltage, which should be carefully compared based on specific application requirements.