TC299T128F300SBCKXUMA1

Basic Information Overview

• Category: Electronic Component
• Use: Memory Module
• Characteristics:
  • High-speed performance
  • Large storage capacity
  • Compact size
• Package: BGA (Ball Grid Array)
• Essence: Non-volatile memory storage
• Packaging/Quantity: Single unit

Specifications

• Model: TC299T128F300SBCKXUMA1
• Storage Capacity: 128GB
• Interface: SATA III
• Form Factor: 2.5-inch
• Speed: 6 Gbps
• NAND Flash Type: Triple-Level Cell (TLC)
• Operating Voltage: 5V
• Operating Temperature: 0°C to 70°C
• MTBF (Mean Time Between Failures): 1.5 million hours

Detailed Pin Configuration

The TC299T128F300SBCKXUMA1 memory module has the following pin configuration:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power Supply (5V) | | 2 | GND | Ground | | 3 | D0 | Data Bit 0 | | 4 | D1 | Data Bit 1 | | 5 | D2 | Data Bit 2 | | 6 | D3 | Data Bit 3 | | 7 | D4 | Data Bit 4 | | 8 | D5 | Data Bit 5 | | 9 | D6 | Data Bit 6 | | 10 | D7 | Data Bit 7 | | 11 | CE | Chip Enable | | 12 | R/B | Ready/Busy Status | | 13 | WE | Write Enable | | 14 | A0 | Address Bit 0 | | 15 | A1 | Address Bit 1 | | 16 | A2 | Address Bit 2 | | 17 | A3 | Address Bit 3 | | 18 | A4 | Address Bit 4 | | 19 | A5 | Address Bit 5 | | 20 | A6 | Address Bit 6 | | 21 | A7 | Address Bit 7 | | 22 | A8 | Address Bit 8 | | 23 | A9 | Address Bit 9 | | 24 | A10 | Address Bit 10 | | 25 | A11 | Address Bit 11 | | 26 | A12 | Address Bit 12 | | 27 | A13 | Address Bit 13 | | 28 | A14 | Address Bit 14 | | 29 | A15 | Address Bit 15 | | 30 | A16 | Address Bit 16 | | 31 | A17 | Address Bit 17 | | 32 | A18 | Address Bit 18 | | 33 | A19 | Address Bit 19 | | 34 | A20 | Address Bit 20 | | 35 | A21 | Address Bit 21 | | 36 | A22 | Address Bit 22 | | 37 | A23 | Address Bit 23 | | 38 | A24 | Address Bit 24 | | 39 | A25 | Address Bit 25 | | 40 | VCCQ | Power Supply for I/O (3.3V) | | 41 | GNDQ | Ground for I/O |

Functional Features

• High-speed data transfer
• Reliable and durable storage
• Low power consumption
• Error correction capabilities
• Wear-leveling technology for extended lifespan
• TRIM support for efficient garbage collection

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rates
• Compact form factor
• Low power consumption
• High reliability and durability

Disadvantages

• Relatively higher cost compared to traditional hard drives
• Limited write endurance compared to SLC (Single-Level Cell) NAND flash

Working Principles

The TC299T128F300SBCKXUMA1 memory module utilizes NAND flash memory technology to store data. It employs a controller that manages the reading and writing of data to the memory cells. When data is written, it is stored in the memory cells by applying electrical charges. During read operations, the controller retrieves the stored data from the memory cells and transfers it to the host device.

Detailed Application Field Plans