DS1220Y-200IND+ Encyclopedia Entry

Product Overview

Category

The DS1220Y-200IND+ belongs to the category of non-volatile static random-access memory (NVSRAM).

Use

This product is primarily used for storing data in applications where non-volatility and high-speed read/write operations are required.

Characteristics

• Non-volatile: The DS1220Y-200IND+ retains stored data even when power is removed.
• High-speed operation: It offers fast read and write access times, making it suitable for time-critical applications.
• Low power consumption: The device operates at low power levels, ensuring energy efficiency.
• Durable: With a high endurance rating, the DS1220Y-200IND+ can withstand numerous read and write cycles without degradation.

Package

The DS1220Y-200IND+ is available in a compact and industry-standard 24-pin DIP (Dual Inline Package) format.

Essence

The essence of the DS1220Y-200IND+ lies in its ability to combine the benefits of both volatile and non-volatile memories. It provides the speed of SRAM (Static Random-Access Memory) and the non-volatility of EEPROM (Electrically Erasable Programmable Read-Only Memory).

Packaging/Quantity

The DS1220Y-200IND+ is typically packaged individually or in reels, with each reel containing a specific quantity of devices. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Memory Size: 2 kilobits (256 x 8 bits)
• Supply Voltage: 4.5V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Minimum 10 years
• Endurance: Minimum 1 million write cycles

Detailed Pin Configuration

The DS1220Y-200IND+ has a total of 24 pins, each serving a specific function. The pin configuration is as follows:

1. Chip Enable (CE)
2. Output Enable (OE)
3. Write Enable (WE)
4. Address Inputs (A0-A7)
5. Data Inputs/Outputs (DQ0-DQ7)
6. Ground (GND)
7. Vcc (Power Supply)

Functional Features

Non-Volatility

The DS1220Y-200IND+ retains stored data even when power is removed, ensuring data integrity and eliminating the need for frequent data backup.

High-Speed Operation

With fast read and write access times, the DS1220Y-200IND+ enables efficient data retrieval and storage in time-critical applications.

Low Power Consumption

Operating at low power levels, this device minimizes energy consumption, making it suitable for battery-powered devices and energy-efficient systems.

Durability

The DS1220Y-200IND+ has a high endurance rating, allowing it to withstand a large number of read and write cycles without degradation or loss of data.

Advantages and Disadvantages

Advantages

• Non-volatile memory with high-speed operation
• Low power consumption
• Durable and reliable
• Easy integration into existing systems
• Compact package size

Disadvantages

• Limited memory capacity (2 kilobits)
• Relatively higher cost compared to volatile memories

Working Principles

The DS1220Y-200IND+ combines the principles of SRAM and EEPROM to achieve non-volatility. It utilizes a small integrated charge pump circuit that provides the necessary voltage to maintain the stored data during power loss. The device employs a floating-gate transistor structure to store the charge, ensuring data retention over extended periods.

Detailed Application Field Plans

The DS1220Y-200IND+ finds applications in various fields, including but not limited to: 1. Industrial automation systems 2. Medical equipment 3. Automotive electronics 4. Communication devices 5. Aerospace and defense systems

Detailed and Complete Alternative Models

1. DS1220AB-100+: Similar to the DS1220Y-200IND+, but with a memory size of 1 kilobit.
2. DS1225AD-150+: Offers a larger memory size of 16 kilobits.
3. DS1230Y-120+: Provides a memory size of 4 kilobits and operates at a lower voltage range.

These alternative models offer different memory capacities and operating characteristics, allowing users to choose the most suitable option for their specific requirements.

In conclusion, the DS1220Y-200IND+ is a non-volatile static random-access memory that combines the benefits of SRAM and EEPROM. With its high-speed operation, low power consumption, and durability, it finds applications in various industries. While it has limitations in terms of memory capacity and cost, alternative models are available to cater to different needs.