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DS1225Y-200IND+

DS1225Y-200IND+ - English Editing Encyclopedia Entry

Product Overview

Category

The DS1225Y-200IND+ belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems, providing reliable and long-term data storage capabilities.

Characteristics

  • Non-volatile: The DS1225Y-200IND+ retains stored data even when power is removed.
  • High capacity: This device offers a storage capacity of 64 kilobits (8 kilobytes).
  • Fast access time: With an access time of 200 nanoseconds, it ensures quick retrieval of stored data.
  • Low power consumption: The DS1225Y-200IND+ operates at low power levels, making it suitable for battery-powered applications.

Package

The DS1225Y-200IND+ is available in a standard 28-pin DIP (Dual Inline Package) format.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile data storage, ensuring that critical information is preserved even during power interruptions or system shutdowns.

Packaging/Quantity

The DS1225Y-200IND+ is typically packaged individually and is available in various quantities depending on the manufacturer's specifications.

Specifications

  • Storage Capacity: 64 kilobits (8 kilobytes)
  • Access Time: 200 nanoseconds
  • Supply Voltage: 4.5V to 5.5V
  • Operating Temperature Range: -40°C to +85°C
  • Data Retention: Minimum 10 years

Detailed Pin Configuration

The DS1225Y-200IND+ features a 28-pin DIP package with the following pin configuration:

  1. Chip Enable (/CE)
  2. Output Enable (/OE)
  3. Write Enable (/WE)
  4. Address Inputs (A0-A14)
  5. Data Inputs/Outputs (DQ0-DQ7)
  6. Ground (GND)
  7. No Connection (NC)
  8. VCC

Functional Features

  • Non-volatile storage: The DS1225Y-200IND+ uses EEPROM technology to provide non-volatile data storage.
  • Easy integration: It can be easily interfaced with various microcontrollers and electronic systems.
  • High reliability: This device offers high endurance and data retention capabilities, ensuring the integrity of stored information.
  • Flexible read/write operations: The DS1225Y-200IND+ supports both random and sequential access, allowing for efficient data retrieval and modification.

Advantages and Disadvantages

Advantages

  • Non-volatile memory ensures data persistence during power loss or system shutdowns.
  • High storage capacity for a wide range of applications.
  • Fast access time enables quick data retrieval.
  • Low power consumption makes it suitable for battery-powered devices.
  • Easy integration with existing electronic systems.

Disadvantages

  • Limited storage capacity compared to other modern memory technologies.
  • Relatively slower write speeds compared to volatile memory alternatives.

Working Principles

The DS1225Y-200IND+ utilizes EEPROM (Electrically Erasable Programmable Read-Only Memory) technology. It stores data by trapping electric charges within its memory cells, which can be selectively erased and programmed using electrical signals. This allows for non-volatile data storage and reliable retrieval even in the absence of power.

Detailed Application Field Plans

The DS1225Y-200IND+ finds application in various fields, including but not limited to: 1. Embedded systems 2. Industrial automation 3. Automotive electronics 4. Medical devices 5. Consumer electronics

Its ability to retain data without power makes it particularly useful in applications where data integrity is crucial, such as critical system configurations, calibration data, and firmware storage.

Detailed and Complete Alternative Models

  1. DS1230AB-200+: Similar to the DS1225Y-200IND+, this model offers a 64 kilobit capacity with a 200 nanosecond access time. It comes in a 28-pin DIP package.
  2. M48Z02-150PC1: This alternative model provides a 256 kilobit capacity with a 150 nanosecond access time. It is available in a 32-pin DIP package.
  3. AT28C64B-15PU: With a capacity of 64 kilobits and a 150 nanosecond access time, this model offers similar specifications to the DS1225Y-200IND+. It comes in a 28-pin DIP package.

These alternative models provide similar functionality and can be considered as substitutes depending on specific application requirements.

In conclusion, the DS1225Y-200IND+ is a non-volatile memory device that offers reliable data storage capabilities. With its high capacity, fast access time, and low power consumption, it finds applications in various fields. While it has certain limitations

기술 솔루션에 DS1225Y-200IND+ 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

Sure! Here are 10 common questions and answers related to the application of DS1225Y-200IND+ in technical solutions:

  1. Question: What is DS1225Y-200IND+?
    Answer: DS1225Y-200IND+ is a non-volatile SRAM (NVSRAM) integrated circuit that combines the benefits of both RAM and non-volatile memory.

  2. Question: What is the capacity of DS1225Y-200IND+?
    Answer: DS1225Y-200IND+ has a capacity of 64 kilobits (8 kilobytes).

  3. Question: How is DS1225Y-200IND+ different from regular SRAM?
    Answer: Unlike regular SRAM, DS1225Y-200IND+ retains its data even when power is removed, making it suitable for applications requiring non-volatile memory.

  4. Question: What are some typical applications of DS1225Y-200IND+?
    Answer: DS1225Y-200IND+ is commonly used in applications such as industrial control systems, gaming machines, medical equipment, and data logging devices.

  5. Question: How does DS1225Y-200IND+ store data without power?
    Answer: DS1225Y-200IND+ uses an integrated lithium energy source to maintain data integrity during power loss or system failure.

  6. Question: Can DS1225Y-200IND+ be easily interfaced with microcontrollers or processors?
    Answer: Yes, DS1225Y-200IND+ features a standard parallel interface, making it compatible with most microcontrollers and processors.

  7. Question: What is the operating voltage range of DS1225Y-200IND+?
    Answer: DS1225Y-200IND+ operates within a voltage range of 4.5V to 5.5V.

  8. Question: Does DS1225Y-200IND+ support fast access times?
    Answer: Yes, DS1225Y-200IND+ has a fast access time of 200 nanoseconds, allowing for quick read and write operations.

  9. Question: Can DS1225Y-200IND+ be used in harsh environments?
    Answer: Yes, DS1225Y-200IND+ is designed to withstand industrial temperature ranges and is suitable for use in rugged environments.

  10. Question: Is DS1225Y-200IND+ pin-compatible with other similar NVSRAM devices?
    Answer: Yes, DS1225Y-200IND+ is pin-compatible with other 28-pin JEDEC standard SRAMs, making it easy to replace existing memory devices in a design.

Please note that these answers are general and may vary depending on the specific requirements and application of DS1225Y-200IND+.