DS1250YP-100+ - English Editing Encyclopedia Entry

Product Overview

Category: Integrated Circuits (ICs)

Use: The DS1250YP-100+ is a high-performance, non-volatile static RAM (NVSRAM) integrated circuit. It combines the benefits of both SRAM and EEPROM technologies, providing fast read/write access with non-volatile data storage capabilities.

Characteristics: - High-speed access time - Non-volatile data retention - Low power consumption - Wide operating voltage range - Durable and reliable

Package: The DS1250YP-100+ is available in a 32-pin DIP (Dual In-line Package) format, which ensures compatibility with various electronic systems.

Essence: The essence of the DS1250YP-100+ lies in its ability to retain data even when power is removed, making it suitable for applications where data integrity is crucial.

Packaging/Quantity: The DS1250YP-100+ is typically packaged in tubes or trays, with quantities varying based on customer requirements.

Specifications

• Memory Size: 1 Megabit (128K x 8)
• Access Time: 100 ns
• Supply Voltage: 4.5V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: >10 years
• Endurance: 1 million write cycles

Detailed Pin Configuration

The DS1250YP-100+ features a 32-pin DIP package with the following pin configuration:

```

Pin Name Description

1 VCC Power Supply 2 A0-A16 Address Inputs 3 CE Chip Enable 4 OE Output Enable 5 WE Write Enable 6-29 DQ0-DQ23 Data Input/Output 30 DS Data Strobe 31 RST Reset 32 VSS Ground ```

Functional Features

• Non-volatile data storage: The DS1250YP-100+ retains data even when power is removed, ensuring data integrity and reliability.
• High-speed access: With an access time of 100 ns, the DS1250YP-100+ provides fast read/write operations, making it suitable for time-critical applications.
• Low power consumption: The integrated circuit operates with low power requirements, optimizing energy efficiency in electronic systems.

Advantages and Disadvantages

Advantages: - Non-volatile data retention ensures data integrity - Fast access time for quick read/write operations - Wide operating voltage range allows compatibility with various systems - Low power consumption for energy-efficient operation

Disadvantages: - Relatively limited memory size compared to other storage technologies - Higher cost compared to traditional SRAM chips

Working Principles

The DS1250YP-100+ combines the principles of SRAM and EEPROM technologies. It utilizes a floating-gate transistor design to store charge, allowing data to be retained even without power. When powered on, the chip operates as a standard SRAM, providing fast read/write access. During power loss or system shutdown, the non-volatile charge stored in the floating gates ensures data retention.

Detailed Application Field Plans

The DS1250YP-100+ finds applications in various fields where data integrity and non-volatile storage are critical. Some potential application areas include: - Industrial control systems - Automotive electronics - Medical devices - Aerospace and defense systems - Communication equipment

Detailed and Complete Alternative Models

1. DS1235YW-120: Similar to DS1250YP-100+, but with a larger memory size (2 Megabits).
2. DS1267YP-80+: A variant with lower access time (80 ns) and extended temperature range (-55°C to +125°C).
3. DS1287YP-150: Offers higher endurance (10 million write cycles) and wider operating voltage range (2.7V to 5.5V).

These alternative models provide options with varying specifications to cater to different application requirements.

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