11LC161T-I/MNY

Product Overview

Category

The 11LC161T-I/MNY belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices, such as microcontrollers, embedded systems, and consumer electronics.

Characteristics

• Non-volatile: The 11LC161T-I/MNY retains stored data even when power is removed.
• High capacity: It offers a storage capacity of 16 kilobits (2 kilobytes).
• Low power consumption: The device operates at low power levels, making it suitable for battery-powered applications.
• Fast access time: The memory can be accessed quickly, allowing for efficient data retrieval.

Package

The 11LC161T-I/MNY is available in a compact surface-mount package, which facilitates easy integration into circuit boards.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile data storage in a compact form factor.

Packaging/Quantity

The 11LC161T-I/MNY is typically packaged in reels or tubes, with each reel or tube containing a specific quantity of devices. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Memory Type: EEPROM (Electrically Erasable Programmable Read-Only Memory)
• Organization: 2048 x 8 bits
• Supply Voltage: 1.8V - 5.5V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 200 years
• Write Endurance: 1 million write cycles

Detailed Pin Configuration

The 11LC161T-I/MNY has a total of 8 pins, each serving a specific function:

1. VCC: Power supply voltage input
2. GND: Ground reference
3. SDA: Serial data input/output
4. SCL: Serial clock input
5. WP: Write protect input
6. HOLD: Hold input
7. NC: No connection
8. VSS: Ground reference

Functional Features

• Byte-wise Read/Write: The memory can be accessed at the byte level, allowing for efficient data manipulation.
• Sequential Read: It supports sequential read operations, enabling faster retrieval of consecutive data.
• Hardware Write Protection: The WP pin can be used to protect the memory from accidental writes.
• Software Write Protection: The device provides software commands to enable or disable write protection.
• Chip Erase: The memory can be erased in its entirety using a chip erase command.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• Compact form factor allows for easy integration into various electronic devices.
• Low power consumption makes it suitable for battery-powered applications.
• Fast access time enables quick data retrieval.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• EEPROMs have a finite number of write cycles, which may limit their lifespan in certain applications.

Working Principles

The 11LC161T-I/MNY utilizes EEPROM technology, which allows for electrically erasing and reprogramming of individual memory cells. It employs floating gate transistors to store charge, representing binary data. The stored charge can be read, written, or erased using specific voltage levels applied to the memory cells.

Detailed Application Field Plans

The 11LC161T-I/MNY finds applications in various fields, including: 1. Microcontrollers: Used for storing program code, configuration data, and user settings. 2. Embedded Systems: Provides non-volatile storage for critical system parameters and calibration data. 3. Consumer Electronics: Enables data storage in devices such as smartwatches, digital cameras, and portable media players.

Detailed and Complete Alternative Models

1. 11LC162-I/SN: Similar to the 11LC161T-I/MNY but with a higher storage capacity of 32 kilobits.
2. 11LC080-I/P: A lower-capacity alternative with 8 kilobits of storage.
3. 11LC322-I/MS: Offers a larger storage capacity of 32 kilobits in a different package.

These alternative models provide options for different storage requirements and package preferences.

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