25LC1024-I/P

Product Overview

Category: Integrated Circuit (IC)

Use: Non-volatile Serial EEPROM Memory

Characteristics: - Low-power CMOS technology - High-speed SPI interface - 1 Mbit (128K x 8) memory capacity - 1.8V to 5.5V operating voltage range - 10^6 erase/write cycles endurance - Data retention of over 200 years - 32-byte page write buffer - Self-timed erase and write cycles

Package: DIP (Dual In-line Package)

Essence: The 25LC1024-I/P is a non-volatile serial EEPROM memory chip that provides reliable data storage in various electronic devices.

Packaging/Quantity: The 25LC1024-I/P is available in a DIP package and is typically sold in reels or tubes containing multiple units.

Specifications

• Memory Capacity: 1 Mbit (128K x 8)
• Operating Voltage Range: 1.8V to 5.5V
• Interface: SPI (Serial Peripheral Interface)
• Erase/Write Endurance: 10^6 cycles
• Data Retention: Over 200 years
• Page Write Buffer: 32 bytes

Detailed Pin Configuration

The 25LC1024-I/P has a total of 8 pins, each serving a specific function:

1. Chip Select (CS): Enables communication with the device when pulled low.
2. Serial Clock (SCK): Provides the clock signal for data transfer.
3. Serial Data Input (SI): Receives data from the master device during write operations.
4. Serial Data Output (SO): Transmits data to the master device during read operations.
5. Write Protect (WP): Allows write protection when connected to VSS (ground).
6. VCC: Power supply input (1.8V to 5.5V).
7. VSS: Ground reference.
8. Hold (HOLD): Suspends serial communication when pulled low.

Functional Features

• Non-volatile memory: Retains data even when power is disconnected.
• High-speed SPI interface: Enables fast data transfer between the device and the master device.
• Self-timed erase and write cycles: Simplifies programming operations.
• Write protection: Allows for data security by enabling write protection using the WP pin.

Advantages and Disadvantages

Advantages: - Low-power consumption - Wide operating voltage range - High endurance and data retention - Compact DIP package for easy integration

Disadvantages: - Limited memory capacity compared to other EEPROM options - Requires an external microcontroller or host device for operation

Working Principles

The 25LC1024-I/P utilizes a floating-gate transistor technology to store data in its non-volatile memory cells. The memory cells can be electrically erased and programmed using the SPI interface. During write operations, data is transferred from the master device to the chip's internal buffer and then programmed into the memory cells. Reading data involves transferring it from the memory cells to the master device via the SPI interface.

Detailed Application Field Plans

The 25LC1024-I/P is commonly used in various electronic devices that require non-volatile memory storage, such as: - Consumer electronics (e.g., TVs, set-top boxes) - Automotive systems (e.g., infotainment, engine control units) - Industrial automation (e.g., PLCs, sensors) - Medical devices (e.g., patient monitoring systems) - Communication equipment (e.g., routers, modems)

Detailed and Complete Alternative Models

• 25AA1024-I/P: Similar to 25LC1024-I/P but with a smaller page write buffer (16 bytes).
• 25LC512-I/P: Half the memory capacity of 25LC1024-I/P (512K x 8) but otherwise similar specifications.
• 25LC256-I/P: Quarter the memory capacity of 25LC1024-I/P (256K x 8) but otherwise similar specifications.

These alternative models offer different memory capacities and page write buffer sizes to suit specific application requirements.

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