Encyclopedia Entry: 93LC76B-E/SN

Product Overview

Category

The 93LC76B-E/SN belongs to the category of electrically erasable programmable read-only memory (EEPROM) chips.

Use

This chip is commonly used for non-volatile data storage in various electronic devices, such as microcontrollers, computers, and consumer electronics.

Characteristics

• Electrically erasable: The 93LC76B-E/SN allows for easy erasure and reprogramming of data without requiring physical removal.
• Non-volatile: The stored data remains intact even when power is removed.
• High storage capacity: This chip offers a storage capacity of 8 kilobits (1 kilobyte).
• Low power consumption: It operates on low power, making it suitable for battery-powered devices.
• Small form factor: The 93LC76B-E/SN comes in a compact package, allowing for space-efficient integration into electronic circuits.

Package and Quantity

The 93LC76B-E/SN is available in an 8-pin SOIC (Small Outline Integrated Circuit) package. It is typically sold in reels containing multiple units, with quantities varying based on customer requirements.

Specifications

• Memory Capacity: 8 kilobits (1 kilobyte)
• Supply Voltage: 2.5V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 200 years
• Write Endurance: 1 million write cycles

Pin Configuration

The 93LC76B-E/SN features the following pin configuration:

```

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| | | 1 8 | | | | 2 7 | | | | 3 6 | | | | 4 5 | |___________| ```

1. Chip Select (CS)
2. Serial Clock (CLK)
3. Serial Data Input/Output (SDI/SDO)
4. Ground (GND)
5. Write Protect (WP)
6. VCC
7. Not Connected (NC)
8. Not Connected (NC)

Functional Features

• Byte-level Read and Write Operations: The 93LC76B-E/SN allows individual bytes to be read from or written to, providing flexibility in data manipulation.
• Sequential Read Operation: It supports sequential reading of multiple bytes, enabling efficient retrieval of stored data.
• Hardware Write Protection: The chip includes a write protect pin (WP) that can be used to prevent accidental or unauthorized writes to the memory.
• Self-Timed Programming Cycle: The programming cycle is internally controlled, eliminating the need for external timing signals.

Advantages and Disadvantages

Advantages

• Easy data erasure and reprogramming without physical removal
• Non-volatile storage ensures data integrity
• Compact form factor for space-efficient integration
• Low power consumption ideal for battery-powered devices

Disadvantages

• Limited storage capacity compared to other memory technologies
• Relatively slower write speeds compared to some alternatives

Working Principles

The 93LC76B-E/SN utilizes an electrically erasable technology based on floating gate transistors. Data is stored by trapping charges in the floating gate, which alters the transistor's behavior. To program or erase data, high voltages are applied to the appropriate pins, modifying the charge distribution within the floating gate.

Application Field Plans

The 93LC76B-E/SN finds applications in various fields, including: - Embedded systems - Automotive electronics - Industrial control systems - Consumer electronics - Medical devices

Alternative Models

• 93LC66B-E/SN: Similar to the 93LC76B-E/SN but with a smaller storage capacity of 4 kilobits.
• 93LC86B-E/SN: Similar to the 93LC76B-E/SN but with a larger storage capacity of 16 kilobits.

These alternative models offer different storage capacities to suit specific application requirements.

In conclusion, the 93LC76B-E/SN is an electrically erasable programmable read-only memory (EEPROM) chip that provides non-volatile data storage in various electronic devices. With its compact size, low power consumption, and flexible functionality, it serves as a reliable solution for storing critical information in diverse applications.