AT25010AN-10SI-2.7

Product Overview

Category

AT25010AN-10SI-2.7 belongs to the category of Serial EEPROM (Electrically Erasable Programmable Read-Only Memory) chips.

Use

This product is commonly used for non-volatile data storage in various electronic devices, such as microcontrollers, computers, and consumer electronics.

Characteristics

• Non-volatile memory: The AT25010AN-10SI-2.7 retains stored data even when power is removed.
• High endurance: It can withstand a large number of read/write cycles.
• Small form factor: The chip is compact and suitable for integration into space-constrained designs.
• Low power consumption: It operates efficiently, consuming minimal power during read/write operations.
• Wide operating voltage range: The chip can function within a voltage range of 2.7V to 5.5V.

Package

The AT25010AN-10SI-2.7 is available in a small outline integrated circuit (SOIC) package.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile data storage in electronic devices.

Packaging/Quantity

The AT25010AN-10SI-2.7 is typically packaged in reels or tubes, with quantities varying based on customer requirements.

Specifications

• Memory capacity: 1 kilobit (128 bytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating voltage: 2.7V to 5.5V
• Operating temperature range: -40°C to +85°C
• Write endurance: 1 million cycles
• Data retention: 100 years

Detailed Pin Configuration

The AT25010AN-10SI-2.7 has a total of 8 pins:

1. Chip Select (/CS): Used to enable or disable the chip for communication.
2. Serial Clock (SCK): Provides the clock signal for data transfer.
3. Serial Data Input (SI): Used to input data into the chip.
4. Serial Data Output (SO): Outputs data from the chip during read operations.
5. Write Protect (/WP): When pulled low, it protects the memory from write operations.
6. VCC: Power supply voltage input.
7. Ground (GND): Common ground reference.
8. Hold (/HOLD): Allows pausing and resuming of serial communication.

Functional Features

• Byte-level Read/Write: The AT25010AN-10SI-2.7 allows individual byte read and write operations.
• Sequential Read: It supports sequential read operations, enabling faster access to consecutive memory locations.
• Software Protection: The write protect feature prevents accidental modification of stored data.
• Hardware Protection: The hold pin allows external devices to pause ongoing operations, ensuring data integrity.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even in the absence of power.
• High endurance allows for frequent read/write cycles without degradation.
• Compact form factor enables integration into space-constrained designs.
• Low power consumption prolongs battery life in portable devices.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Slower write speeds compared to volatile memory types.
• Relatively higher cost per bit compared to larger capacity EEPROMs.

Working Principles

The AT25010AN-10SI-2.7 utilizes electrically controlled floating gate transistors to store and retrieve data. When writing, a high voltage is applied to the gate, allowing electrons to tunnel through an insulating layer onto the floating gate. This process traps charge, representing a logical "1" or "0". During reading, the stored charge is sensed, determining the stored data.

Detailed Application Field Plans

The AT25010AN-10SI-2.7 finds applications in various fields, including: 1. Embedded systems: Used for firmware storage in microcontrollers and system-on-chip devices. 2. Automotive electronics: Employed for storing calibration data, configuration settings, and event logs. 3. Industrial automation: Utilized for parameter storage, device identification, and data logging. 4. Consumer electronics: Integrated into products like smart TVs, set-top boxes, and gaming consoles for configuration and user data storage.

Detailed and Complete Alternative Models

1. AT25020AN-10SI-2.7: Similar to the AT25010AN-10SI-2.7 but with double the memory capacity (2 kilobits).
2. AT25040AN-10SI-2.7: Offers four times the memory capacity (4 kilobits) compared to the AT25010AN-10SI-2.7.
3. AT25080AN-10SI-2.7: Provides eight times the memory capacity (8 kilobits) compared to the AT25010AN-10