AT25F1024N-10SI-2.7

Basic Information Overview

Category: Integrated Circuit (IC)

Use: Non-volatile Serial Flash Memory

Characteristics: - High-density storage - Low power consumption - Serial interface for easy integration - Reliable data retention - Fast read and write operations

Package: SOIC (Small Outline Integrated Circuit)

Essence: The AT25F1024N-10SI-2.7 is a high-performance serial flash memory IC that provides non-volatile storage for various electronic devices.

Packaging/Quantity: The AT25F1024N-10SI-2.7 is typically packaged in reels or tubes, with a quantity of 2500 units per reel/tube.

Specifications

• Memory Size: 1 Megabit (128 Kilobytes)
• Operating Voltage: 2.7 to 3.6 Volts
• Interface: Serial Peripheral Interface (SPI)
• Maximum Clock Frequency: 10 MHz
• Erase/Program Cycle Endurance: 100,000 cycles
• Data Retention: 20 years
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The AT25F1024N-10SI-2.7 has a total of 8 pins, which are as follows:

1. Chip Select (/CS) - Used to enable/disable the device.
2. Serial Clock (SCK) - Provides the clock signal for data transfer.
3. Serial Data Input (SI) - Used to input data into the device.
4. Serial Data Output (SO) - Outputs data from the device.
5. Write Protect (/WP) - Enables or disables write protection.
6. Hold (/HOLD) - Suspends ongoing operations.
7. VCC - Power supply voltage.
8. Ground (GND) - Ground reference.

Functional Features

• High-Speed Read/Write Operations: The AT25F1024N-10SI-2.7 offers fast data transfer rates, allowing for efficient read and write operations.
• Flexible Interface: It utilizes the Serial Peripheral Interface (SPI), enabling easy integration with various microcontrollers and other devices.
• Reliable Data Retention: The IC ensures long-term data integrity with a data retention period of up to 20 years.
• Low Power Consumption: With its low power requirements, the AT25F1024N-10SI-2.7 is suitable for battery-powered applications.
• Erase/Program Cycle Endurance: The IC supports up to 100,000 erase/program cycles, ensuring durability and longevity.

Advantages and Disadvantages

Advantages: - High-density storage capacity - Easy integration with serial interface - Reliable data retention - Low power consumption - Fast read and write operations

Disadvantages: - Limited memory size compared to higher-capacity flash memory ICs - Relatively lower clock frequency compared to some newer flash memory technologies

Working Principles

The AT25F1024N-10SI-2.7 operates based on the principles of flash memory technology. It uses floating-gate transistors to store and retrieve digital information. When data is written, charges are trapped in the floating gate, altering the transistor's conductive properties. These charges can be erased by applying a high voltage, allowing new data to be written.

Detailed Application Field Plans

The AT25F1024N-10SI-2.7 is widely used in various electronic devices that require non-volatile storage, including but not limited to: - Consumer electronics (e.g., smartphones, tablets, digital cameras) - Automotive systems (e.g., infotainment systems, instrument clusters) - Industrial equipment (e.g., control systems, data loggers) - Medical devices (e.g., patient monitoring systems, diagnostic equipment)

Detailed and Complete Alternative Models

1. AT25F512B-SSH-B: 512 Kilobit Serial Flash Memory IC with similar features but lower storage capacity.
2. AT25SF041-SSHD-T: 4 Megabit Serial Flash Memory IC with higher storage capacity and faster clock frequency.
3. MX25L12835FM2I-10G: 128 Megabit Serial Flash Memory IC with larger storage capacity and comparable performance.

These alternative models offer different storage capacities and features to cater to various application requirements.

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