AT25FS010N-SH27-T

Product Overview

Category

AT25FS010N-SH27-T belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving digital data in electronic systems.

Characteristics

• Non-volatile: The stored data is retained even when power is removed.
• High storage capacity: The AT25FS010N-SH27-T has a storage capacity of 1 megabit (128 kilobytes).
• Serial interface: It utilizes a serial peripheral interface (SPI) for communication with the host system.
• Low power consumption: The device operates at low power levels, making it suitable for battery-powered applications.

Package

The AT25FS010N-SH27-T is available in a small outline integrated circuit (SOIC) package.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

The AT25FS010N-SH27-T is typically packaged in reels and is available in quantities specified by the manufacturer.

Specifications

• Memory capacity: 1 megabit (128 kilobytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating voltage: 2.7V to 3.6V
• Operating temperature range: -40°C to +85°C
• Data retention: Up to 20 years
• Programming cycles: 100,000 cycles

Detailed Pin Configuration

The AT25FS010N-SH27-T has a total of 8 pins:

1. Chip Select (/CS): Used to enable or disable the device.
2. Serial Clock (SCK): Provides the clock signal for data transfer.
3. Serial Data Input (SI): Used to input data from the host system.
4. Serial Data Output (SO): Outputs data from the device to the host system.
5. Write Protect (/WP): Used to protect the memory from accidental writes.
6. Hold (/HOLD): Allows the host system to pause data transfer.
7. VCC: Power supply voltage.
8. Ground (GND): Common ground reference.

Functional Features

• Byte-level read and write operations: Allows for efficient manipulation of data stored in the memory.
• Sector erase capability: Enables erasing of large blocks of data for efficient memory management.
• Software protection: Provides a mechanism to protect specific memory regions from being modified.
• Fast data transfer: The SPI interface allows for high-speed data transfer between the device and the host system.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High storage capacity for various applications.
• Low power consumption extends battery life in portable devices.
• Compact package size enables integration into space-constrained designs.

Disadvantages

• Limited programming cycles may restrict certain applications with frequent write operations.
• Relatively slower data transfer rate compared to some other memory technologies.

Working Principles

The AT25FS010N-SH27-T utilizes flash memory technology to store digital data. It employs a floating gate transistor structure that can trap or release electrical charges, representing binary states (0s and 1s). These states are then interpreted as data by the host system.

During write operations, the device applies a high voltage to the floating gate, allowing electrons to tunnel through an insulating layer and become trapped. This process alters the transistor's conductive properties, storing the desired data. Reading the stored data involves sensing the transistor's conductance and interpreting it as the corresponding binary state.

Detailed Application Field Plans

The AT25FS010N-SH27-T finds application in various electronic systems, including but not limited to: - Consumer electronics: Used in devices such as smartphones, tablets, and digital cameras for data storage. - Automotive systems: Employed in automotive infotainment systems, instrument clusters, and navigation systems. - Industrial equipment: Used for data logging, firmware storage, and configuration settings in industrial control systems. - Medical devices: Utilized for storing patient data, device configurations, and firmware updates in medical equipment.

Detailed and Complete Alternative Models

1. AT25FS010N-SH27-B: Similar to the AT25FS010N-SH27-T, but available in a different package.
2. AT25FS020N-SH27-T: Offers double the storage capacity of the AT25FS010N-SH27-T.
3. AT25FS040N-SH27-T: Provides four times the storage capacity of the AT25FS010N-SH27-T.

These alternative models offer similar functionality with varying storage capacities and package options.

In conclusion, the AT25FS010N-SH27-T is a non-volatile memory device that provides reliable and high-capacity storage for electronic systems. Its compact size, low power consumption, and versatile interface make