AT29C256-70TI

Product Overview

Category

AT29C256-70TI belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: The stored data remains intact even when power is removed.
• High capacity: The AT29C256-70TI has a storage capacity of 256 kilobits (32 kilobytes).
• Fast access time: It operates at a speed of 70 nanoseconds, allowing for quick data retrieval.
• Low power consumption: The device is designed to minimize power usage, making it suitable for battery-powered applications.

Package

The AT29C256-70TI is available in a standard 28-pin DIP (Dual Inline Package) format.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

The AT29C256-70TI is typically packaged in reels or tubes, with each package containing a specific quantity of devices. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Storage Capacity: 256 kilobits (32 kilobytes)
• Access Time: 70 nanoseconds
• Supply Voltage: 5V
• Operating Temperature Range: -40°C to +85°C
• Package Type: 28-pin DIP

Detailed Pin Configuration

The AT29C256-70TI has a total of 28 pins, each serving a specific purpose. The pin configuration is as follows:

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. A8 - Address Input
10. A9 - Address Input
11. A10 - Address Input
12. A11 - Address Input
13. A12 - Address Input
14. A13 - Address Input
15. A14 - Address Input
16. A15 - Address Input
17. OE - Output Enable
18. CE - Chip Enable
19. WE - Write Enable
20. I/O0 - Data Input/Output
21. I/O1 - Data Input/Output
22. I/O2 - Data Input/Output
23. I/O3 - Data Input/Output
24. I/O4 - Data Input/Output
25. I/O5 - Data Input/Output
26. I/O6 - Data Input/Output
27. I/O7 - Data Input/Output
28. Vcc - Power Supply

Functional Features

• Random Access: The AT29C256-70TI allows for random access to any memory location, enabling efficient data retrieval.
• Byte-Writable: It supports byte-level write operations, providing flexibility in updating specific portions of the memory.
• Sector Erase: The device allows for sector erase, which erases a block of memory at once, facilitating efficient memory management.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data integrity even during power loss.
• Fast access time enables quick data retrieval.
• Low power consumption makes it suitable for battery-powered applications.
• Byte-writable capability allows for flexible data updates.

Disadvantages

• Limited storage capacity compared to other memory devices.
• Relatively slower access time compared to some modern memory technologies.

Working Principles

The AT29C256-70TI is based on Flash memory technology. It utilizes floating-gate transistors to store and retrieve digital information. When data is written, charges are trapped in the floating gate, altering the transistor's behavior. These charges can be erased by applying a higher voltage, allowing the transistor to return to its original state.

Detailed Application Field Plans

The AT29C256-70TI finds applications in various electronic systems, including but not limited to: - Microcontrollers - Embedded systems - Industrial automation - Automotive electronics - Consumer electronics

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to the AT29C256-70TI include: - AT28C256-15PU - SST39SF010A-70-4C-PHE - M29F200BB-70N6E

These models provide comparable storage capacity, access time, and features, making them suitable alternatives for different application requirements.

In conclusion, the AT29C256-70TI is a non-volatile memory device with a storage capacity of 256 kilobits. It offers fast access time, low power consumption, and byte-writable capability. While it has limitations in terms of storage capacity and access time compared