AT49BV160T-70CI

Product Overview

Category

AT49BV160T-70CI belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: The AT49BV160T-70CI retains stored data even when power is removed.
• High capacity: It has a storage capacity of 16 megabits (2 megabytes).
• Fast access time: The device offers a fast access time of 70 nanoseconds.
• Low power consumption: It operates at low power levels, making it suitable for battery-powered devices.

Package

The AT49BV160T-70CI is available in a compact plastic package, which ensures protection from external elements and facilitates easy integration into electronic circuits.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile storage for digital data in various electronic applications.

Packaging/Quantity

The AT49BV160T-70CI is typically packaged in reels or trays, with each package containing a specific quantity of devices. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Flash
• Organization: 2M x 8
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time: 70 ns
• Erase/Program Suspend & Resume Support: Yes
• Data Retention: 20 years

Detailed Pin Configuration

The AT49BV160T-70CI features a parallel interface with the following pin configuration:

1. A0-A19: Address Inputs
2. DQ0-DQ7: Data Input/Output
3. CE: Chip Enable
4. OE: Output Enable
5. WE: Write Enable
6. RP: Reset/Power-down
7. BYTE# (BYTE#1, BYTE#2): Byte Enable
8. VCC: Power Supply
9. GND: Ground

Functional Features

• Erase and Program Operations: The AT49BV160T-70CI supports both sector erase and byte program operations, allowing flexible data manipulation.
• Suspend and Resume Support: This feature enables the interruption and resumption of erase or program operations, enhancing programming efficiency.
• Automatic Page Write: The device supports automatic page write, simplifying the programming process by enabling multiple bytes to be programmed simultaneously.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity allows for storing large amounts of digital information.
• Fast access time enables quick retrieval of stored data.
• Low power consumption makes it suitable for battery-powered devices.

Disadvantages

• Limited endurance: Flash memory has a finite number of erase/write cycles before degradation may occur.
• Relatively higher cost compared to other types of memory.

Working Principles

The AT49BV160T-70CI utilizes flash memory technology, which is based on the principle of trapping electrical charges within floating gate transistors. These trapped charges represent binary data (0s and 1s) and can be electrically manipulated through erase and program operations.

During programming, an electrical charge is applied to the floating gate, altering its threshold voltage and thereby storing data. Erasing involves removing the trapped charges from the floating gate, resetting the memory cell to an unprogrammed state.

Detailed Application Field Plans

The AT49BV160T-70CI finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

1. AT49BV1604T-70CI: Similar to AT49BV160T-70CI, but with a storage capacity of 4 megabits (512 kilobytes).
2. AT49BV1614T-70CI: Similar to AT49BV160T-70CI, but with a storage capacity of 16 megabits (2 megabytes) and an extended operating temperature range (-40°C to +105°C).
3. AT49BV320T-70CI: Similar to AT49BV160T-70CI, but with a storage capacity of 32 megabits (4 megabytes).

These alternative models offer similar functionality and characteristics, providing options for different memory requirements.

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