AT49BV3218-90TI

Product Overview

Category

AT49BV3218-90TI belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: The stored data is retained even when power is removed.
• High capacity: The AT49BV3218-90TI has a storage capacity of 32 megabits (4 megabytes).
• Fast access time: It operates with a maximum access time of 90 nanoseconds.
• Low power consumption: The device is designed to minimize power usage during operation.
• Reliable: It offers high endurance and data retention capabilities.

Package

The AT49BV3218-90TI is available in a surface mount package, specifically the Thin Small Outline Package (TSOP).

Essence

The essence of this product lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

The AT49BV3218-90TI is typically packaged in reels, with each reel containing a specific quantity of devices. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 32 megabits (4 megabytes)
• Access Time: 90 nanoseconds
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel

Detailed Pin Configuration

The AT49BV3218-90TI features a parallel interface with the following pin configuration:

1. A0-A18: Address Inputs
2. DQ0-DQ15: Data Input/Output
3. CE: Chip Enable
4. OE: Output Enable
5. WE: Write Enable
6. VCC: Power Supply
7. GND: Ground

Functional Features

• Random Access: The device allows for random access to any memory location.
• Byte-Wide Read/Write: It supports byte-wide read and write operations.
• Sector Erase: The AT49BV3218-90TI can erase data in sectors, allowing for efficient memory management.
• Write Protection: Certain sectors can be write-protected to prevent accidental modification.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High capacity allows for storing large amounts of data.
• Fast access time enables quick retrieval of information.
• Low power consumption prolongs battery life in portable devices.

Disadvantages

• Limited endurance: Frequent write cycles may reduce the lifespan of the device.
• Relatively higher cost compared to other memory technologies.

Working Principles

The AT49BV3218-90TI utilizes flash memory technology. It stores data by trapping electric charges within floating gate transistors. These charges represent binary values (0 or 1) and are retained even when power is removed. To read or write data, specific voltage levels are applied to the appropriate pins, enabling the manipulation of stored information.

Detailed Application Field Plans

The AT49BV3218-90TI finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

• AT49BV322A-70TU: 32 megabit parallel flash memory with a faster access time of 70 nanoseconds.
• AT49BV320C-70TU: 32 megabit parallel flash memory with a lower supply voltage range of 2.7V - 3.3V.
• AT49BV322D-70TU: 32 megabit parallel flash memory with additional security features.

These alternative models offer similar functionality and can be considered as alternatives to the AT49BV3218-90TI based on specific requirements.

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