AT49BV3218T-11CI

Product Overview

Category

AT49BV3218T-11CI belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, tablets, and other digital devices.

Characteristics

• Non-volatile memory: The AT49BV3218T-11CI retains stored data even when power is turned off.
• High capacity: This flash memory chip has a capacity of 32 megabits (4 megabytes).
• Fast access time: The AT49BV3218T-11CI offers quick read and write operations, ensuring efficient data transfer.
• Low power consumption: It is designed to consume minimal power during operation, making it suitable for battery-powered devices.
• Reliable performance: This flash memory chip provides reliable and stable data storage, ensuring data integrity.

Package and Quantity

The AT49BV3218T-11CI is available in a compact surface-mount package. The quantity may vary depending on the manufacturer or supplier.

Specifications

• Manufacturer: Atmel Corporation
• Part Number: AT49BV3218T-11CI
• Memory Type: Flash
• Capacity: 32 Megabits (4 Megabytes)
• Access Time: 110 ns
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48

Detailed Pin Configuration

The AT49BV3218T-11CI has a total of 48 pins. Here is a detailed pin configuration:

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. A8 - Address Input
10. A9 - Address Input
11. A10 - Address Input
12. A11 - Address Input
13. A12 - Address Input
14. A13 - Address Input
15. A14 - Address Input
16. A15 - Address Input
17. A16 - Address Input
18. A17 - Address Input
19. A18 - Address Input
20. A19 - Address Input
21. A20 - Address Input
22. A21 - Address Input
23. A22 - Address Input
24. A23 - Address Input
25. A24 - Address Input
26. A25 - Address Input
27. ALE - Address Latch Enable
28. CE - Chip Enable
29. OE - Output Enable
30. WE - Write Enable
31. BYTE# - Byte Selection
32. DQ0 - Data Input/Output
33. DQ1 - Data Input/Output
34. DQ2 - Data Input/Output
35. DQ3 - Data Input/Output
36. DQ4 - Data Input/Output
37. DQ5 - Data Input/Output
38. DQ6 - Data Input/Output
39. DQ7 - Data Input/Output
40. VCC - Power Supply
41. GND - Ground
42. RP# - Ready/Busy Output
43. RESET# - Reset Input
44. WP# - Write Protect Input
45. NC - No Connection
46. NC - No Connection
47. NC - No Connection
48. NC - No Connection

Functional Features

The AT49BV3218T-11CI offers the following functional features:

• High-speed read and write operations
• Sector erase capability for efficient data management
• Low power consumption during standby mode
• Automatic sleep mode to conserve energy
• Hardware and software protection mechanisms to prevent unauthorized access or modification of data

Advantages and Disadvantages

Advantages

• High capacity for storing large amounts of data
• Fast access time for quick data retrieval
• Reliable performance ensures data integrity
• Low power consumption extends battery life in portable devices
• Sector erase capability allows efficient data management

Disadvantages

• Limited endurance: Flash memory has a finite number of erase/write cycles before it may become unreliable.
• Relatively higher cost compared to other types of memory.

Working Principles

The AT49BV3218T-11CI utilizes the principles of flash memory technology. It stores data by trapping electric charges within floating gate transistors. These charges represent binary information (0s and 1s). The stored data can be accessed and modified through specific electrical signals applied to the chip's pins.

Detailed Application Field Plans

The AT49BV3218T-11CI is