AT49F001NT-90JC

Product Overview

Category

AT49F001NT-90JC belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: The stored data is retained even when power is removed.
• High capacity: The AT49F001NT-90JC has a storage capacity of 1 megabit (128 kilobytes).
• Fast access time: It offers a fast access time of 90 nanoseconds.
• Low power consumption: This device operates at low power, making it suitable for battery-powered applications.

Package

The AT49F001NT-90JC is available in a 32-pin PLCC (Plastic Leaded Chip Carrier) package.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

The AT49F001NT-90JC is typically packaged in reels or tubes, with a quantity of 1000 units per package.

Specifications

• Memory Type: Flash EEPROM
• Organization: 128K x 8 bits
• Supply Voltage: 4.5V - 5.5V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 10 years
• Erase/Write Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

The AT49F001NT-90JC has a total of 32 pins. Here is the detailed pin configuration:

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VPP
13. WE#
14. OE#
15. CE#
16. BYTE#
17. NC
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. VCC
27. GND
28. RP#
29. RY/BY#
30. RESET#
31. A8
32. A9

Functional Features

• Easy interface: The AT49F001NT-90JC supports a standard parallel interface, making it compatible with various microcontrollers and systems.
• Sector erase capability: It allows for erasing data in sectors, enabling efficient memory management.
• Programming voltage: The device supports a programming voltage range of 4.5V to 5.5V, ensuring compatibility with different system requirements.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High capacity allows for storing large amounts of data.
• Fast access time enables quick retrieval of information.
• Low power consumption makes it suitable for battery-powered devices.

Disadvantages

• Limited erase/write cycle endurance compared to some other non-volatile memory technologies.
• Requires external programming voltage (VPP) for programming operations.

Working Principles

The AT49F001NT-90JC utilizes flash EEPROM technology for data storage. It consists of a grid of memory cells that can be electrically programmed and erased. When data is written, an electrical charge is applied to the memory cell, altering its state. To erase data, the charge is removed from the cell. This process allows for non-volatile storage of digital information.

Detailed Application Field Plans

The AT49F001NT-90JC finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

• AT49F002NT-90JC: 2 megabit (256 kilobytes) capacity
• AT49F004NT-90JC: 4 megabit (512 kilobytes) capacity
• AT49F008NT-90JC: 8 megabit (1 megabyte) capacity

These alternative models offer higher storage capacities while maintaining similar characteristics and functionality.

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